A quantum topological transistor in bilayer graphene

We propose a method of realizing a quantum topological transistor in AB-stacked bilayer graphene with Rashba spin–orbit interaction (RSOI) and interlayer bias voltage. It is found that electrons in the proposed device are transmitted in the channels confined at the edges without backscattering, and the resulting perfect conductance plateau can be changed to zero by modulating the interlayer potential difference in bilayer graphene. Our theoretical prediction suggests the possibility of designing a dissipationless quantum transistor in which transport properties are controlled by external gates. The proposed method is useful in the development of electronic devices with low power consumption.