A Protocol For The Synthesis Of Bismuth Vanadate Double-Layer Homojunction Without Heteroatoms As Photoelectrode

一種不引入雜原子合成釩酸鉍雙層薄膜同質結構的方案

Research output: Patents, Agreements and Assignments › RGC 51 - Patents (CityUHK)

Overview

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Author(s)

Ruiqin ZHANG (Inventor)
Haipeng WANG (Inventor)

Related Research Unit(s)

Department of Physics

Detail(s)

Original language	English
Patent number	US12,227,856B2
Filing number	18/174,036
Publication status	Accepted/In press/Filed - 24 Feb 2023 Published - 18 Feb 2025

Link(s)

	Check@CityULib
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(5635d472-ce2f-4b22-a1d9-f111623744c3).html

Citation Format(s)

[ RIS ] [ BibTeX ]

A Protocol For The Synthesis Of Bismuth Vanadate Double-Layer Homojunction Without Heteroatoms As Photoelectrode. / ZHANG, Ruiqin (Inventor); WANG, Haipeng (Inventor).
Patent No.: US12,227,856B2. Feb 18, 2025.

Research output: Patents, Agreements and Assignments › RGC 51 - Patents (CityUHK)

ZHANG, R & WANG, H Feb. 18 2025, A Protocol For The Synthesis Of Bismuth Vanadate Double-Layer Homojunction Without Heteroatoms As Photoelectrode, Patent No. US12,227,856B2.

ZHANG, R., & WANG, H. (2025). A Protocol For The Synthesis Of Bismuth Vanadate Double-Layer Homojunction Without Heteroatoms As Photoelectrode. (Patent No. US12,227,856B2).

ZHANG R , WANG H, inventors. A Protocol For The Synthesis Of Bismuth Vanadate Double-Layer Homojunction Without Heteroatoms As Photoelectrode. US12,227,856B2. 2025 Feb 18.

ZHANG, Ruiqin (Inventor) ; WANG, Haipeng (Inventor). / A Protocol For The Synthesis Of Bismuth Vanadate Double-Layer Homojunction Without Heteroatoms As Photoelectrode. Patent No.: US12,227,856B2. Feb 18, 2025.