| Translated title of the contribution | 一種不引入雜原子合成釩酸鉍雙層薄膜同質結構的方案 |
|---|---|
| Original language | English |
| Patent number | US12,227,856B2 |
| Publication status | Published - 18 Feb 2025 |
A Protocol For The Synthesis Of Bismuth Vanadate Double-Layer Homojunction Without Heteroatoms As Photoelectrode
Ruiqin ZHANG (Inventor), Haipeng WANG (Inventor)
Research output: Patents, Agreements and Assignments › RGC 51 - Patents (CityUHK)