A parallel FET linearizer with complex capacitance

Wai Keung Lo; Wing Shing Chan; Chung Wai Li

doi:10.1002/mop.20674

A parallel FET linearizer with complex capacitance

Wai Keung Lo
, Wing Shing Chan
, Chung Wai Li

Department of Electrical Engineering

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

1 Citation (Scopus)

Abstract

Linearization of the gate-source capacitance in a GaAs FET using a parallel reverse biased gate-source junction and complex capacitance is proposed. This method offers a simple and low-cost solution in reducing AM/PM distortion. An analysis for maximizing the performance of this linearizer is also presented. © 2005 Wiley Periodicals, Inc.

Original language	English
Pages (from-to)	485-487
Journal	Microwave and Optical Technology Letters
Volume	44
Issue number	5
DOIs	https://doi.org/10.1002/mop.20674
Publication status	Published - 5 Mar 2005

Research Keywords

Intermodulation distortion
Linearization
RF power amplifier
Spectral regrowth

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title = "A parallel FET linearizer with complex capacitance",

abstract = "Linearization of the gate-source capacitance in a GaAs FET using a parallel reverse biased gate-source junction and complex capacitance is proposed. This method offers a simple and low-cost solution in reducing AM/PM distortion. An analysis for maximizing the performance of this linearizer is also presented. {\textcopyright} 2005 Wiley Periodicals, Inc.",

keywords = "Intermodulation distortion, Linearization, RF power amplifier, Spectral regrowth",

author = "Lo, \{Wai Keung\} and Chan, \{Wing Shing\} and Li, \{Chung Wai\}",

year = "2005",

month = mar,

day = "5",

doi = "10.1002/mop.20674",

language = "English",

volume = "44",

pages = "485--487",

journal = "Microwave and Optical Technology Letters",

issn = "0895-2477",

publisher = "John Wiley \& Sons",

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TY - JOUR

T1 - A parallel FET linearizer with complex capacitance

AU - Lo, Wai Keung

AU - Chan, Wing Shing

AU - Li, Chung Wai

PY - 2005/3/5

Y1 - 2005/3/5

N2 - Linearization of the gate-source capacitance in a GaAs FET using a parallel reverse biased gate-source junction and complex capacitance is proposed. This method offers a simple and low-cost solution in reducing AM/PM distortion. An analysis for maximizing the performance of this linearizer is also presented. © 2005 Wiley Periodicals, Inc.

AB - Linearization of the gate-source capacitance in a GaAs FET using a parallel reverse biased gate-source junction and complex capacitance is proposed. This method offers a simple and low-cost solution in reducing AM/PM distortion. An analysis for maximizing the performance of this linearizer is also presented. © 2005 Wiley Periodicals, Inc.

KW - Intermodulation distortion

KW - Linearization

KW - RF power amplifier

KW - Spectral regrowth

UR - https://www.scopus.com/pages/publications/14744273108

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-14744273108&origin=recordpage

U2 - 10.1002/mop.20674

DO - 10.1002/mop.20674

M3 - RGC 21 - Publication in refereed journal

SN - 0895-2477

VL - 44

SP - 485

EP - 487

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

IS - 5

ER -

A parallel FET linearizer with complex capacitance

Abstract

Research Keywords

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