A Novel MEMS force sensor based on laterally movable gate array field effect transistor(LMGAFET)

Wendi Gao; Libo Zhao; Zhuangde Jiang; Yong Xia; Xin Guo; Zhiming Zhao; Yulong Zhao; Dong Sun

doi:10.1109/NEMS.2017.8017122

A Novel MEMS force sensor based on laterally movable gate array field effect transistor(LMGAFET)

Wendi Gao
, Libo Zhao^*
, Zhuangde Jiang
, Yong Xia
, Xin Guo
, Zhiming Zhao
, Yulong Zhao
, Dong Sun

^*Corresponding author for this work

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

8 Citations (Scopus)

Abstract

In this research, we propose a novel MEMS sensor based on Laterally Movable Gate Array Field Effect Transistor (LMGAFET) for the measurement of nN force. By designing an array structure and adopting reasonable parameters and utilizing modified MOS3 model, the sensor's proved to have high sensitivity of 0.107 mA/nN, low cross-Axis sensitivity and excellent linearity. Besides, a modified MOS3 model is presented and utilized to demonstrate operation behavior of the sensor. This sensor with the ability of measuring nN force can be widely used in evaluate biophysical properties measurement of cells or tissues.

Original language	English
Title of host publication	2017 IEEE 12th International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)
Publisher	IEEE
Pages	723-727
ISBN (Electronic)	9781509030590
DOIs	https://doi.org/10.1109/NEMS.2017.8017122
Publication status	Published - Aug 2017
Event	12th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2017 - UCLA, Los Angeles, United States Duration: 9 Apr 2017 → 12 Apr 2017 http://ieee-nems.org/2017/

Publication series

Name	IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)
Publisher	IEEE
ISSN (Electronic)	2474-3755

Conference

Conference	12th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2017
Abbreviated title	IEEE-NEMS 2017
Place	United States
City	Los Angeles
Period	9/04/17 → 12/04/17
Internet address	http://ieee-nems.org/2017/

Research Keywords

biophysical properties measurement
FET
force sensor
MEMS

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10.1109/NEMS.2017.8017122

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Gao, W., Zhao, L., Jiang, Z., Xia, Y., Guo, X., Zhao, Z., Zhao, Y., & Sun, D. (2017). A Novel MEMS force sensor based on laterally movable gate array field effect transistor(LMGAFET). In 2017 IEEE 12th International Conference on Nano/Micro Engineered and Molecular Systems (NEMS) (pp. 723-727). Article 8017122 (IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)). IEEE. https://doi.org/10.1109/NEMS.2017.8017122

@inproceedings{cc449e9fbd6349f7ab195dfaea4f40b4,

title = "A Novel MEMS force sensor based on laterally movable gate array field effect transistor(LMGAFET)",

abstract = "In this research, we propose a novel MEMS sensor based on Laterally Movable Gate Array Field Effect Transistor (LMGAFET) for the measurement of nN force. By designing an array structure and adopting reasonable parameters and utilizing modified MOS3 model, the sensor's proved to have high sensitivity of 0.107 mA/nN, low cross-Axis sensitivity and excellent linearity. Besides, a modified MOS3 model is presented and utilized to demonstrate operation behavior of the sensor. This sensor with the ability of measuring nN force can be widely used in evaluate biophysical properties measurement of cells or tissues.",

keywords = "biophysical properties measurement, FET, force sensor, MEMS",

author = "Wendi Gao and Libo Zhao and Zhuangde Jiang and Yong Xia and Xin Guo and Zhiming Zhao and Yulong Zhao and Dong Sun",

year = "2017",

month = aug,

doi = "10.1109/NEMS.2017.8017122",

language = "English",

series = "IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)",

publisher = "IEEE",

pages = "723--727",

booktitle = "2017 IEEE 12th International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)",

address = "United States",

note = "12th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2017, IEEE-NEMS 2017 ; Conference date: 09-04-2017 Through 12-04-2017",

url = "http://ieee-nems.org/2017/",

}

Gao, W, Zhao, L, Jiang, Z, Xia, Y, Guo, X, Zhao, Z, Zhao, Y & Sun, D 2017, A Novel MEMS force sensor based on laterally movable gate array field effect transistor(LMGAFET). in 2017 IEEE 12th International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)., 8017122, IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS), IEEE, pp. 723-727, 12th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2017, Los Angeles, United States, 9/04/17. https://doi.org/10.1109/NEMS.2017.8017122

A Novel MEMS force sensor based on laterally movable gate array field effect transistor(LMGAFET). / Gao, Wendi; Zhao, Libo; Jiang, Zhuangde et al.
2017 IEEE 12th International Conference on Nano/Micro Engineered and Molecular Systems (NEMS). IEEE, 2017. p. 723-727 8017122 (IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)).

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - A Novel MEMS force sensor based on laterally movable gate array field effect transistor(LMGAFET)

AU - Gao, Wendi

AU - Zhao, Libo

AU - Jiang, Zhuangde

AU - Xia, Yong

AU - Guo, Xin

AU - Zhao, Zhiming

AU - Zhao, Yulong

AU - Sun, Dong

PY - 2017/8

Y1 - 2017/8

N2 - In this research, we propose a novel MEMS sensor based on Laterally Movable Gate Array Field Effect Transistor (LMGAFET) for the measurement of nN force. By designing an array structure and adopting reasonable parameters and utilizing modified MOS3 model, the sensor's proved to have high sensitivity of 0.107 mA/nN, low cross-Axis sensitivity and excellent linearity. Besides, a modified MOS3 model is presented and utilized to demonstrate operation behavior of the sensor. This sensor with the ability of measuring nN force can be widely used in evaluate biophysical properties measurement of cells or tissues.

AB - In this research, we propose a novel MEMS sensor based on Laterally Movable Gate Array Field Effect Transistor (LMGAFET) for the measurement of nN force. By designing an array structure and adopting reasonable parameters and utilizing modified MOS3 model, the sensor's proved to have high sensitivity of 0.107 mA/nN, low cross-Axis sensitivity and excellent linearity. Besides, a modified MOS3 model is presented and utilized to demonstrate operation behavior of the sensor. This sensor with the ability of measuring nN force can be widely used in evaluate biophysical properties measurement of cells or tissues.

KW - biophysical properties measurement

KW - FET

KW - force sensor

KW - MEMS

UR - https://www.scopus.com/pages/publications/85030845656

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-85030845656&origin=recordpage

U2 - 10.1109/NEMS.2017.8017122

DO - 10.1109/NEMS.2017.8017122

M3 - RGC 32 - Refereed conference paper (with host publication)

T3 - IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)

SP - 723

EP - 727

BT - 2017 IEEE 12th International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)

PB - IEEE

T2 - 12th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2017

Y2 - 9 April 2017 through 12 April 2017

ER -

Gao W, Zhao L, Jiang Z, Xia Y, Guo X, Zhao Z et al. A Novel MEMS force sensor based on laterally movable gate array field effect transistor(LMGAFET). In 2017 IEEE 12th International Conference on Nano/Micro Engineered and Molecular Systems (NEMS). IEEE. 2017. p. 723-727. 8017122. (IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)). doi: 10.1109/NEMS.2017.8017122

A Novel MEMS force sensor based on laterally movable gate array field effect transistor(LMGAFET)

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