A novel light emitting device based on SI nanostructures and tunneling injection of carriers

H. Wong; V. Filip; P. L. Chu

A novel light emitting device based on SI nanostructures and tunneling injection of carriers

H. Wong, V. Filip, P. L. Chu

Department of Electrical Engineering

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

2 Citations (Scopus)

Abstract

A light emitting device structure based on Si/SiO₂/LD Si/SI ₃N₄/Si system was proposed. The low dimensional Si was shown to govern the photon generation efficiency and the energy spectrum. The asymmetry barrier heights formed by the SiO₂ and Si₃N ₄ were found to provide high efficiency carrier injection based on direct tunnelling and maximize the recombination event taking place in the LD Si region. Quantum calculations on the charge transports, including the direct tunnelling carrier injection at the Si/Si₂ interface and band-to-band recombination of in LD Si were also conducted.

Original language	English
Title of host publication	Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004
Pages	162-163
Publication status	Published - 2004
Event	Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004 - Cambridge, MA, United States Duration: 11 Jul 2004 → 16 Jul 2004

Conference

Conference	Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004
Place	United States
City	Cambridge, MA
Period	11/07/04 → 16/07/04

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title = "A novel light emitting device based on SI nanostructures and tunneling injection of carriers",

abstract = "A light emitting device structure based on Si/SiO2/LD Si/SI 3N4/Si system was proposed. The low dimensional Si was shown to govern the photon generation efficiency and the energy spectrum. The asymmetry barrier heights formed by the SiO2 and Si3N 4 were found to provide high efficiency carrier injection based on direct tunnelling and maximize the recombination event taking place in the LD Si region. Quantum calculations on the charge transports, including the direct tunnelling carrier injection at the Si/Si2 interface and band-to-band recombination of in LD Si were also conducted.",

author = "H. Wong and V. Filip and Chu, {P. L.}",

year = "2004",

language = "English",

isbn = "0780383974",

pages = "162--163",

booktitle = "Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004",

note = "Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004 ; Conference date: 11-07-2004 Through 16-07-2004",

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A novel light emitting device based on SI nanostructures and tunneling injection of carriers. / Wong, H.; Filip, V.; Chu, P. L.
Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004. 2004. p. 162-163.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

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T1 - A novel light emitting device based on SI nanostructures and tunneling injection of carriers

AU - Wong, H.

AU - Filip, V.

AU - Chu, P. L.

PY - 2004

Y1 - 2004

N2 - A light emitting device structure based on Si/SiO2/LD Si/SI 3N4/Si system was proposed. The low dimensional Si was shown to govern the photon generation efficiency and the energy spectrum. The asymmetry barrier heights formed by the SiO2 and Si3N 4 were found to provide high efficiency carrier injection based on direct tunnelling and maximize the recombination event taking place in the LD Si region. Quantum calculations on the charge transports, including the direct tunnelling carrier injection at the Si/Si2 interface and band-to-band recombination of in LD Si were also conducted.

AB - A light emitting device structure based on Si/SiO2/LD Si/SI 3N4/Si system was proposed. The low dimensional Si was shown to govern the photon generation efficiency and the energy spectrum. The asymmetry barrier heights formed by the SiO2 and Si3N 4 were found to provide high efficiency carrier injection based on direct tunnelling and maximize the recombination event taking place in the LD Si region. Quantum calculations on the charge transports, including the direct tunnelling carrier injection at the Si/Si2 interface and band-to-band recombination of in LD Si were also conducted.

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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-13644262354&origin=recordpage

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 0780383974

SN - 9780780383975

SP - 162

EP - 163

BT - Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004

T2 - Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004

Y2 - 11 July 2004 through 16 July 2004

ER -

A novel light emitting device based on SI nanostructures and tunneling injection of carriers

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