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A novel hybrid parameter extraction method for GaAs/GaN HEMT modeling with electromagnetic analysis

Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review

Abstract

A hybrid parameter extraction method for GaAs/GaN HEMT modeling is proposed. The electromagnetic (EM) simulation is integrated to de-embed the coupling effects of the extrinsic passive part of the device. By analyzing the coefficient matrix of de-embedded Y-parameters with rearrangements, the intrinsic elements values of HEMTs' small-signal equivalent circuit can be solved uniquely from different frequency conditions. © 2015 IEEE.
Original languageEnglish
Title of host publication2015 Asia-Pacific Microwave Conference, APMC 2015 - Proceedings
PublisherIEEE
Volume2
ISBN (Print)9781479987658
DOIs
Publication statusPublished - 18 Feb 2016
Externally publishedYes
EventAsia-Pacific Microwave Conference, APMC 2015 - Nanjing, China
Duration: 6 Dec 20159 Dec 2015

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC
Volume2

Conference

ConferenceAsia-Pacific Microwave Conference, APMC 2015
PlaceChina
CityNanjing
Period6/12/159/12/15

Bibliographical note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

Research Keywords

  • analytical extraction
  • Electromagnetic (EM) simulation
  • GaAs/GaN HEMTs
  • small-signal modeling

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