A Novel Gate Boosting Circuit for 2-Phase High Voltage CMOS Charge Pump

Oi-Ying Wong; Wing-Shan Tam; Chi-Wah Kok; Hei Wong

doi:10.1109/EDSSC.2009.5394272

A Novel Gate Boosting Circuit for 2-Phase High Voltage CMOS Charge Pump

Oi-Ying Wong
, Wing-Shan Tam
, Chi-Wah Kok
, Hei Wong

Department of Electrical Engineering

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

7 Citations (Scopus)

Abstract

A novel gate boosting circuit is proposed for general switched-capacitor charge pump. The proposed circuit only requires two small transistors to generate the necessary driving signal from a clock signal that swings between 0V to V_DD for closing and opening the charge transfer switches in the charge pump. As a result, the proposed gate boosting circuit reduces the design complexity and silicon area. Moreover, the regular structure eases the layout and increases the reliability of the implemented charge pump. A 3x Makowski charge pump implemented by the proposed gate boosting element is simulated. An output voltage closed to the ideal one shows that the proposed gate boosting circuit is suitable to be used in designing high efficiency charge pumps. © 2009 IEEE.

Original language	English
Title of host publication	2009 IEEE International Conference on Electron Devices and Solid-State Circuits
Publisher	IEEE
Pages	250-253
ISBN (Electronic)	978-1-4244-4298-0
ISBN (Print)	978-1-4244-4297-3
DOIs	https://doi.org/10.1109/EDSSC.2009.5394272
Publication status	Published - Dec 2009
Event	2009 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC 2009) - Grand Park Hotel, Xi'an, China Duration: 25 Dec 2009 → 27 Dec 2009

Conference

Conference	2009 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC 2009)
Place	China
City	Xi'an
Period	25/12/09 → 27/12/09

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@inproceedings{255e70f4ebfb45f8999104a8e2c59d5f,

title = "A Novel Gate Boosting Circuit for 2-Phase High Voltage CMOS Charge Pump",

abstract = "A novel gate boosting circuit is proposed for general switched-capacitor charge pump. The proposed circuit only requires two small transistors to generate the necessary driving signal from a clock signal that swings between 0V to VDD for closing and opening the charge transfer switches in the charge pump. As a result, the proposed gate boosting circuit reduces the design complexity and silicon area. Moreover, the regular structure eases the layout and increases the reliability of the implemented charge pump. A 3x Makowski charge pump implemented by the proposed gate boosting element is simulated. An output voltage closed to the ideal one shows that the proposed gate boosting circuit is suitable to be used in designing high efficiency charge pumps. {\textcopyright} 2009 IEEE.",

author = "Oi-Ying Wong and Wing-Shan Tam and Chi-Wah Kok and Hei Wong",

year = "2009",

month = dec,

doi = "10.1109/EDSSC.2009.5394272",

language = "English",

isbn = "978-1-4244-4297-3",

pages = "250--253",

booktitle = "2009 IEEE International Conference on Electron Devices and Solid-State Circuits",

publisher = "IEEE",

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note = "2009 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC 2009) ; Conference date: 25-12-2009 Through 27-12-2009",

}

Wong, O-Y, Tam, W-S, Kok, C-W & Wong, H 2009, A Novel Gate Boosting Circuit for 2-Phase High Voltage CMOS Charge Pump. in 2009 IEEE International Conference on Electron Devices and Solid-State Circuits. IEEE, pp. 250-253, 2009 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC 2009), Xi'an, China, 25/12/09. https://doi.org/10.1109/EDSSC.2009.5394272

A Novel Gate Boosting Circuit for 2-Phase High Voltage CMOS Charge Pump. / Wong, Oi-Ying; Tam, Wing-Shan; Kok, Chi-Wah et al.
2009 IEEE International Conference on Electron Devices and Solid-State Circuits. IEEE, 2009. p. 250-253.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - A Novel Gate Boosting Circuit for 2-Phase High Voltage CMOS Charge Pump

AU - Wong, Oi-Ying

AU - Tam, Wing-Shan

AU - Kok, Chi-Wah

AU - Wong, Hei

PY - 2009/12

Y1 - 2009/12

N2 - A novel gate boosting circuit is proposed for general switched-capacitor charge pump. The proposed circuit only requires two small transistors to generate the necessary driving signal from a clock signal that swings between 0V to VDD for closing and opening the charge transfer switches in the charge pump. As a result, the proposed gate boosting circuit reduces the design complexity and silicon area. Moreover, the regular structure eases the layout and increases the reliability of the implemented charge pump. A 3x Makowski charge pump implemented by the proposed gate boosting element is simulated. An output voltage closed to the ideal one shows that the proposed gate boosting circuit is suitable to be used in designing high efficiency charge pumps. © 2009 IEEE.

AB - A novel gate boosting circuit is proposed for general switched-capacitor charge pump. The proposed circuit only requires two small transistors to generate the necessary driving signal from a clock signal that swings between 0V to VDD for closing and opening the charge transfer switches in the charge pump. As a result, the proposed gate boosting circuit reduces the design complexity and silicon area. Moreover, the regular structure eases the layout and increases the reliability of the implemented charge pump. A 3x Makowski charge pump implemented by the proposed gate boosting element is simulated. An output voltage closed to the ideal one shows that the proposed gate boosting circuit is suitable to be used in designing high efficiency charge pumps. © 2009 IEEE.

UR - https://www.scopus.com/pages/publications/77949760237

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U2 - 10.1109/EDSSC.2009.5394272

DO - 10.1109/EDSSC.2009.5394272

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 978-1-4244-4297-3

SP - 250

EP - 253

BT - 2009 IEEE International Conference on Electron Devices and Solid-State Circuits

PB - IEEE

T2 - 2009 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC 2009)

Y2 - 25 December 2009 through 27 December 2009

ER -

A Novel Gate Boosting Circuit for 2-Phase High Voltage CMOS Charge Pump

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