A Novel Device Geometry for Vortex Random Access Memories
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
Original language | English |
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Pages (from-to) | 3400404 - |
Journal / Publication | IEEE Transactions on Magnetics |
Volume | 50 |
Issue number | 7 |
Publication status | Published - 2014 |
Link(s)
Abstract
The vortex state is one of the equilibrium configurations of soft magnetic materials and occurs in thin ferromagnetic square and disk-shaped elements of sub-micrometer size. The vortex state has a specific excitation mode: the in-plane gyration of the vortex structure about its equilibrium position. This mode can be electrically excited by a spin-polarized current. When the gyrating vortex reaches a critical velocity, a switching of the vortex core can occur. We show here how to increase the vortex velocity to reduce the switching current. The vortex core can be switched back by reversing the current direction.
Research Area(s)
- Magnetic memories, magnetic vortices, spin transfer torque
Citation Format(s)
A Novel Device Geometry for Vortex Random Access Memories. / Shao, Qi; Ku, Pui Sze; Ruotolo, Antonio.
In: IEEE Transactions on Magnetics, Vol. 50, No. 7, 2014, p. 3400404 -.
In: IEEE Transactions on Magnetics, Vol. 50, No. 7, 2014, p. 3400404 -.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review