A novel consistent gate-charge model of GaAs MESFETs for the design of K u-band power amplifiers

Zheng Zhong; Yongxin Guo; Mook Seng Leong

A novel consistent gate-charge model of GaAs MESFETs for the design of K _u-band power amplifiers

Zheng Zhong, Yongxin Guo, Mook Seng Leong

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

In this paper, a novel consistent gate charge model for GaAs MESFETs based upon charge conservation is proposed. This new model is capable of accurately modeling the transistor under various biasing conditions. Moreover, the performance prediction in the linear region, saturation knee region and sub-threshold region is greatly improved. Measured and modeled results of a 2×150μm GaAs MESFET are compared and good agreement has been obtained. In addition, a Ku-band power amplifier was designed with the new model for the verification of its nonlinear properties. © 2011 Engineers Australia.

Original language	English
Title of host publication	Asia-Pacific Microwave Conference Proceedings, APMC 2011
Pages	295-298
Publication status	Published - 2011
Externally published	Yes
Event	Asia-Pacific Microwave Conference, APMC 2011 - Melbourne, VIC, Australia Duration: 5 Dec 2011 → 8 Dec 2011

Publication series

Name	Asia-Pacific Microwave Conference Proceedings, APMC

Conference

Conference	Asia-Pacific Microwave Conference, APMC 2011
Place	Australia
City	Melbourne, VIC
Period	5/12/11 → 8/12/11

Bibliographical note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

Research Keywords

GaAs MESFETs
Gate-charge Model
Large-signal Model

Other Access Options

Check CityUHK Library

Permanent Link

Right click to copy link

Cite this

@inproceedings{aff4ea8caded4ef48d198ce6c5d9d667,

title = "A novel consistent gate-charge model of GaAs MESFETs for the design of K u-band power amplifiers",

abstract = "In this paper, a novel consistent gate charge model for GaAs MESFETs based upon charge conservation is proposed. This new model is capable of accurately modeling the transistor under various biasing conditions. Moreover, the performance prediction in the linear region, saturation knee region and sub-threshold region is greatly improved. Measured and modeled results of a 2×150μm GaAs MESFET are compared and good agreement has been obtained. In addition, a Ku-band power amplifier was designed with the new model for the verification of its nonlinear properties. {\textcopyright} 2011 Engineers Australia.",

keywords = "GaAs MESFETs, Gate-charge Model, Large-signal Model",

author = "Zheng Zhong and Yongxin Guo and Leong, {Mook Seng}",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].; Asia-Pacific Microwave Conference, APMC 2011 ; Conference date: 05-12-2011 Through 08-12-2011",

year = "2011",

language = "English",

isbn = "9780858259744",

series = "Asia-Pacific Microwave Conference Proceedings, APMC",

pages = "295--298",

booktitle = "Asia-Pacific Microwave Conference Proceedings, APMC 2011",

}

A novel consistent gate-charge model of GaAs MESFETs for the design of K _u-band power amplifiers. / Zhong, Zheng; Guo, Yongxin; Leong, Mook Seng.
Asia-Pacific Microwave Conference Proceedings, APMC 2011. 2011. p. 295-298 6173744 (Asia-Pacific Microwave Conference Proceedings, APMC).

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - A novel consistent gate-charge model of GaAs MESFETs for the design of K u-band power amplifiers

AU - Zhong, Zheng

AU - Guo, Yongxin

AU - Leong, Mook Seng

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2011

Y1 - 2011

N2 - In this paper, a novel consistent gate charge model for GaAs MESFETs based upon charge conservation is proposed. This new model is capable of accurately modeling the transistor under various biasing conditions. Moreover, the performance prediction in the linear region, saturation knee region and sub-threshold region is greatly improved. Measured and modeled results of a 2×150μm GaAs MESFET are compared and good agreement has been obtained. In addition, a Ku-band power amplifier was designed with the new model for the verification of its nonlinear properties. © 2011 Engineers Australia.

AB - In this paper, a novel consistent gate charge model for GaAs MESFETs based upon charge conservation is proposed. This new model is capable of accurately modeling the transistor under various biasing conditions. Moreover, the performance prediction in the linear region, saturation knee region and sub-threshold region is greatly improved. Measured and modeled results of a 2×150μm GaAs MESFET are compared and good agreement has been obtained. In addition, a Ku-band power amplifier was designed with the new model for the verification of its nonlinear properties. © 2011 Engineers Australia.

KW - GaAs MESFETs

KW - Gate-charge Model

KW - Large-signal Model

UR - http://www.scopus.com/inward/record.url?scp=84860532941&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84860532941&origin=recordpage

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 9780858259744

T3 - Asia-Pacific Microwave Conference Proceedings, APMC

SP - 295

EP - 298

BT - Asia-Pacific Microwave Conference Proceedings, APMC 2011

T2 - Asia-Pacific Microwave Conference, APMC 2011

Y2 - 5 December 2011 through 8 December 2011

ER -