A new nucleation method by electron cyclotron resonance enhanced microwave plasma chemical vapor deposition for deposition of (001)-oriented diamond films

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)4616-4618
Journal / PublicationJournal of Chemical Physics
Volume110
Issue number9
Publication statusPublished - 1 Mar 1999

Abstract

A new nucleation method, which is different from bias-enhanced nucleation, was employed for the preparation of (001)-oriented diamond films on untreated, mirror-polished silicon substrates. The nucleation was realized in an electron cyclotron resonance enhanced microwave plasma at a pressure of about 10-3 Torr which was 4 orders of magnitude lower than that normally used for bias-enhanced nucleation (∼tens Torr). Scanning electron microscopy and Raman spectroscopy were used to investigate the surface morphology and phase purity of the deposited diamond films. The new findings may provide us a route to further understand the nucleation mechanism of diamond films by chemical vapor deposition. © 1999 American Institute of Physics.

Citation Format(s)

A new nucleation method by electron cyclotron resonance enhanced microwave plasma chemical vapor deposition for deposition of (001)-oriented diamond films. / Zhang, W. J.; Sun, C.; Bello, I. et al.
In: Journal of Chemical Physics, Vol. 110, No. 9, 01.03.1999, p. 4616-4618.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review