A New Approach to Current-Voltage Characteristics Formation for Short-Channel MOSFET’s

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Original languageEnglish
Pages (from-to)2480-2482
Journal / PublicationIEEE Transactions on Electron Devices
Volume41
Issue number12
Publication statusPublished - Dec 1994

Abstract

A new approach to the current-voltage (I-V) characteristics formulation for short-channel MOSFET’s by incorporating the channel length modulation, mobility degradation, drain induced barrier lowering, and threshold voltage variation into Pao-Sah’s equation is presented. Results show that the calculated I-V characteristics agree well with the experimental ones for devices with effective channel length in the range of 0.44 ~ 20 µm. Compared with the existing models, the model has the advantages of less number of model parameters and simpler form of the current-voltage relationship. © 1994 IEEE