A New Approach to Current-Voltage Characteristics Formation for Short-Channel MOSFET’s

H. Wong

doi:10.1109/16.337470

Author(s)

H. Wong

Related Research Unit(s)

Department of Electrical Engineering

Detail(s)

Original language	English
Pages (from-to)	2480-2482
Journal / Publication	IEEE Transactions on Electron Devices
Volume	41
Issue number	12
Publication status	Published - Dec 1994

Link(s)

DOI	DOI https://doi.org/10.1109/16.337470 Final Published version
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Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-0028740281&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(874068c1-7436-49b9-92e1-2089f389620f).html

Abstract

A new approach to the current-voltage (I-V) characteristics formulation for short-channel MOSFET’s by incorporating the channel length modulation, mobility degradation, drain induced barrier lowering, and threshold voltage variation into Pao-Sah’s equation is presented. Results show that the calculated I-V characteristics agree well with the experimental ones for devices with effective channel length in the range of 0.44 ~ 20 µm. Compared with the existing models, the model has the advantages of less number of model parameters and simpler form of the current-voltage relationship. © 1994 IEEE

Citation Format(s)

[ RIS ] [ BibTeX ]

A New Approach to Current-Voltage Characteristics Formation for Short-Channel MOSFET’s. / Wong, H.
In: IEEE Transactions on Electron Devices, Vol. 41, No. 12, 12.1994, p. 2480-2482.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Wong, H 1994, 'A New Approach to Current-Voltage Characteristics Formation for Short-Channel MOSFET’s', IEEE Transactions on Electron Devices, vol. 41, no. 12, pp. 2480-2482. https://doi.org/10.1109/16.337470

Wong, H. (1994). A New Approach to Current-Voltage Characteristics Formation for Short-Channel MOSFET’s. IEEE Transactions on Electron Devices, 41(12), 2480-2482. https://doi.org/10.1109/16.337470

Wong H. A New Approach to Current-Voltage Characteristics Formation for Short-Channel MOSFET’s. IEEE Transactions on Electron Devices. 1994 Dec;41(12):2480-2482. doi: 10.1109/16.337470

Wong, H. / A New Approach to Current-Voltage Characteristics Formation for Short-Channel MOSFET’s. In: IEEE Transactions on Electron Devices. 1994 ; Vol. 41, No. 12. pp. 2480-2482.