@inproceedings{81e91c2e4236451c8295b2bafded3211,
title = "A new approach to characterize and predict lifetime of deep-submicron nMOS devices",
abstract = "Experimental results indicated that the widely used power-law model for lifetime estimation is inaccurate for deep submicron (<0.25 μm) devices. It underestimates the lifetime for large substrate hot-carrier stressing. This observation is attributed to current components that do not induce device degradation, such as the gate tunneling current and base current of parasitic bipolar transistor, in substrate current and gate current. A better lifetime prediction method is proposed for the deep-submicron devices. {\textcopyright} 2004 IEEE.",
keywords = "Gate current, Lifetime model, MOS devices, Reliability, Substrate current",
author = "Zhi Cui and Liou, \{Juin J.\} and Yun Yue and Hei Wong",
year = "2004",
language = "English",
volume = "2",
pages = "787--791",
booktitle = "International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT",
note = "7th International Conference on Solid-State and Integrated Circuits Technology (ICSICT 2004), ICSICT 2004 ; Conference date: 18-10-2004 Through 21-10-2004",
}