A model for 〈c+a〉 dislocation transmission across nano-spaced parallel basal stacking faults in a HCP alloy

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Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)58-66
Journal / PublicationPhilosophical Magazine Letters
Volume95
Issue number1
Online published16 Feb 2015
Publication statusPublished - 2015
Externally publishedYes

Abstract

We develop a model for recently observed 〈c + a〉 dislocation transmission across nano-spaced parallel basal stacking faults in hexagonal close-packed (HCP) Mg microcrystalline grains. The model theoretically predicts nanospace-dependent yield strength that is in good agreement with experimental data. Additionally, it theoretically predicts activation volume and strain rate sensitivity.

Research Area(s)

  • flow stress, nano-structure, plastic deformation, stacking fault