A model for 〈c+a〉 dislocation transmission across nano-spaced parallel basal stacking faults in a HCP alloy

Pei Gu; Yuntian Zhu; Suveen N. Mathaudhu

doi:10.1080/09500839.2015.1008066

Author(s)

Pei Gu
Yuntian Zhu
Suveen N. Mathaudhu

Detail(s)

Original language	English
Pages (from-to)	58-66
Journal / Publication	Philosophical Magazine Letters
Volume	95
Issue number	1
Online published	16 Feb 2015
Publication status	Published - 2015
Externally published	Yes

Link(s)

DOI	DOI https://doi.org/10.1080/09500839.2015.1008066 Final Published version
	Check@CityULib
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-84926419338&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(60b46f3d-14b7-44ae-8800-03e1c7335ffa).html

Abstract

We develop a model for recently observed 〈c + a〉 dislocation transmission across nano-spaced parallel basal stacking faults in hexagonal close-packed (HCP) Mg microcrystalline grains. The model theoretically predicts nanospace-dependent yield strength that is in good agreement with experimental data. Additionally, it theoretically predicts activation volume and strain rate sensitivity.

Research Area(s)

flow stress, nano-structure, plastic deformation, stacking fault

Citation Format(s)

[ RIS ] [ BibTeX ]

A model for 〈c+a〉 dislocation transmission across nano-spaced parallel basal stacking faults in a HCP alloy. / Gu, Pei; Zhu, Yuntian; Mathaudhu, Suveen N.
In: Philosophical Magazine Letters, Vol. 95, No. 1, 2015, p. 58-66.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Gu, P, Zhu, Y & Mathaudhu, SN 2015, 'A model for 〈c+a〉 dislocation transmission across nano-spaced parallel basal stacking faults in a HCP alloy', Philosophical Magazine Letters, vol. 95, no. 1, pp. 58-66. https://doi.org/10.1080/09500839.2015.1008066

Gu, P., Zhu, Y., & Mathaudhu, S. N. (2015). A model for 〈c+a〉 dislocation transmission across nano-spaced parallel basal stacking faults in a HCP alloy. Philosophical Magazine Letters, 95(1), 58-66. https://doi.org/10.1080/09500839.2015.1008066

Gu P, Zhu Y, Mathaudhu SN. A model for 〈c+a〉 dislocation transmission across nano-spaced parallel basal stacking faults in a HCP alloy. Philosophical Magazine Letters. 2015;95(1):58-66. Epub 2015 Feb 16. doi: 10.1080/09500839.2015.1008066

Gu, Pei ; Zhu, Yuntian ; Mathaudhu, Suveen N. / A model for 〈c+a〉 dislocation transmission across nano-spaced parallel basal stacking faults in a HCP alloy. In: Philosophical Magazine Letters. 2015 ; Vol. 95, No. 1. pp. 58-66.