A memristive diode for neuromorphic computing

Memristive devices may extent the potential of information processing beyond Boolean computation. Of particular interest for computer science are those devices that change behavior according to the particular stimulus given. This property is called plasticity and is typical of biological systems, like neuron synapses. We here show that a memristive diode can be fabricated by using low-resistive ZnO. Bipolar memristive switching is induced in ZnO-based Schottky diodes. The electrical characterization of the devices confirms that switching is due to uniform migration of oxygen vacancies under the interface. The induced electrical state can be dynamically altered according to polarity, amplitude and duration of applied electrical stimuli.