A magnetic flower state-based memory cell
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 22_Publication in policy or professional journal
|Journal / Publication||IEEE Transactions on Magnetics|
|Publication status||Published - Jul 2011|
|Link to Scopus||https://www.scopus.com/record/display.uri?eid=2-s2.0-79959724762&origin=recordpage|
In an elliptical magnetic dot two vortices and a flower state configuration can be accommodated at remanence. We show that a two-fold degeneracy in the position of the flower state can be geometrically introduced and exploited for solid state data storage. Switching between two, energetically-equivalent, magnetic configurations is obtained by injecting a perpendicular electric current. Switching currents of the order of ∼ 105 A/cm 2 and high thermal stability are demonstrated by micromagnetic simulations. This system can be used as a bit-cell for magnetic solid state data storage. The low value of the switching current and the high thermal stability allow direct integration with the current complementary metal oxide semiconductor technology. © 2011 IEEE.
- Magnetic devices, magnetic memories, magnetic vortex, micromagnetic simulations