A magnetic flower state-based memory cell
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 22_Publication in policy or professional journal
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Article number | 5929010 |
| Pages (from-to) | 1970-1973 |
| Journal / Publication | IEEE Transactions on Magnetics |
| Volume | 47 |
| Issue number | 7 |
| Publication status | Published - Jul 2011 |
Link(s)
Abstract
In an elliptical magnetic dot two vortices and a flower state configuration can be accommodated at remanence. We show that a two-fold degeneracy in the position of the flower state can be geometrically introduced and exploited for solid state data storage. Switching between two, energetically-equivalent, magnetic configurations is obtained by injecting a perpendicular electric current. Switching currents of the order of ∼ 105 A/cm 2 and high thermal stability are demonstrated by micromagnetic simulations. This system can be used as a bit-cell for magnetic solid state data storage. The low value of the switching current and the high thermal stability allow direct integration with the current complementary metal oxide semiconductor technology. © 2011 IEEE.
Research Area(s)
- Magnetic devices, magnetic memories, magnetic vortex, micromagnetic simulations
Citation Format(s)
A magnetic flower state-based memory cell. / Wang, N.; Wang, X. L. ; Ruotolo, A.
In: IEEE Transactions on Magnetics, Vol. 47, No. 7, 5929010, 07.2011, p. 1970-1973.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 22_Publication in policy or professional journal
