A magnetic flower state-based memory cell

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)22_Publication in policy or professional journal

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Author(s)

Detail(s)

Original languageEnglish
Article number5929010
Pages (from-to)1970-1973
Journal / PublicationIEEE Transactions on Magnetics
Volume47
Issue number7
Publication statusPublished - Jul 2011

Abstract

In an elliptical magnetic dot two vortices and a flower state configuration can be accommodated at remanence. We show that a two-fold degeneracy in the position of the flower state can be geometrically introduced and exploited for solid state data storage. Switching between two, energetically-equivalent, magnetic configurations is obtained by injecting a perpendicular electric current. Switching currents of the order of ∼ 105 A/cm 2 and high thermal stability are demonstrated by micromagnetic simulations. This system can be used as a bit-cell for magnetic solid state data storage. The low value of the switching current and the high thermal stability allow direct integration with the current complementary metal oxide semiconductor technology. © 2011 IEEE.

Research Area(s)

  • Magnetic devices, magnetic memories, magnetic vortex, micromagnetic simulations

Citation Format(s)

A magnetic flower state-based memory cell. / Wang, N.; Wang, X. L. ; Ruotolo, A.

In: IEEE Transactions on Magnetics, Vol. 47, No. 7, 5929010, 07.2011, p. 1970-1973.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)22_Publication in policy or professional journal