A low power temperature insensitive voltage supervisory circuit in metal gate technology

Wing-Shan Tam; Oi-Ying Wong; Chi-Wah Kok; Hei Wong

doi:10.1109/EDSSC.2009.5394222

A low power temperature insensitive voltage supervisory circuit in metal gate technology

Wing-Shan Tam^*, Oi-Ying Wong, Chi-Wah Kok, Hei Wong

^*Corresponding author for this work

Department of Electrical Engineering

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

1 Citation (Scopus)

Abstract

A low power and temperature insensitive voltage supervisory circuit implemented in 2.25μm metal gate process is presented in this paper. Through accurate modeling of the MOS transistors in the metal process with the consideration of leakage current, the proposed voltage supervisory circuit can generate a stable detected voltage at 3 V in a wide input voltage range of 1.5 V to 6 V, and operating temperature range of -30°C to 90°C, while implemented with very compact silicon area of 0.06mm². The whole circuit consumes less then 72 μW at 3 V input. ©2009 IEEE.

Original language	English
Title of host publication	2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
Pages	437-440
DOIs	https://doi.org/10.1109/EDSSC.2009.5394222
Publication status	Published - 2009
Event	2009 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC 2009) - Grand Park Hotel, Xi'an, China Duration: 25 Dec 2009 → 27 Dec 2009

Conference

Conference	2009 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC 2009)
Place	China
City	Xi'an
Period	25/12/09 → 27/12/09

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@inproceedings{5d463cf278894f16a445413201c2f4ad,

title = "A low power temperature insensitive voltage supervisory circuit in metal gate technology",

abstract = "A low power and temperature insensitive voltage supervisory circuit implemented in 2.25μm metal gate process is presented in this paper. Through accurate modeling of the MOS transistors in the metal process with the consideration of leakage current, the proposed voltage supervisory circuit can generate a stable detected voltage at 3 V in a wide input voltage range of 1.5 V to 6 V, and operating temperature range of -30°C to 90°C, while implemented with very compact silicon area of 0.06mm2. The whole circuit consumes less then 72 μW at 3 V input. {\textcopyright}2009 IEEE.",

author = "Wing-Shan Tam and Oi-Ying Wong and Chi-Wah Kok and Hei Wong",

year = "2009",

doi = "10.1109/EDSSC.2009.5394222",

language = "English",

isbn = "9781424442980",

pages = "437--440",

booktitle = "2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009",

note = "2009 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC 2009) ; Conference date: 25-12-2009 Through 27-12-2009",

}

Tam, W-S, Wong, O-Y, Kok, C-W & Wong, H 2009, A low power temperature insensitive voltage supervisory circuit in metal gate technology. in 2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009., 5394222, pp. 437-440, 2009 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC 2009), Xi'an, China, 25/12/09. https://doi.org/10.1109/EDSSC.2009.5394222

A low power temperature insensitive voltage supervisory circuit in metal gate technology. / Tam, Wing-Shan; Wong, Oi-Ying; Kok, Chi-Wah et al.
2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009. 2009. p. 437-440 5394222.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - A low power temperature insensitive voltage supervisory circuit in metal gate technology

AU - Tam, Wing-Shan

AU - Wong, Oi-Ying

AU - Kok, Chi-Wah

AU - Wong, Hei

PY - 2009

Y1 - 2009

N2 - A low power and temperature insensitive voltage supervisory circuit implemented in 2.25μm metal gate process is presented in this paper. Through accurate modeling of the MOS transistors in the metal process with the consideration of leakage current, the proposed voltage supervisory circuit can generate a stable detected voltage at 3 V in a wide input voltage range of 1.5 V to 6 V, and operating temperature range of -30°C to 90°C, while implemented with very compact silicon area of 0.06mm2. The whole circuit consumes less then 72 μW at 3 V input. ©2009 IEEE.

AB - A low power and temperature insensitive voltage supervisory circuit implemented in 2.25μm metal gate process is presented in this paper. Through accurate modeling of the MOS transistors in the metal process with the consideration of leakage current, the proposed voltage supervisory circuit can generate a stable detected voltage at 3 V in a wide input voltage range of 1.5 V to 6 V, and operating temperature range of -30°C to 90°C, while implemented with very compact silicon area of 0.06mm2. The whole circuit consumes less then 72 μW at 3 V input. ©2009 IEEE.

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U2 - 10.1109/EDSSC.2009.5394222

DO - 10.1109/EDSSC.2009.5394222

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 9781424442980

SP - 437

EP - 440

BT - 2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009

T2 - 2009 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC 2009)

Y2 - 25 December 2009 through 27 December 2009

ER -

A low power temperature insensitive voltage supervisory circuit in metal gate technology

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