Abstract
A low power magnetic field sensor fabricated with sectorial split-drain MAGFET (SSD-MAGFET) in conventional 2.5μm metal gate CMOS process with a digital readout circuit that outputs pulse width modulated (PWM) signal linearly related to the magnetic fi eld strength acting on the device is presented. Resistive trimming circuits are applied to achieve offset and sensitivity adjustment. Using 5V supply voltage, the power consumption of the system is measured to be less than 1mW, 8-bits accuracy, polarity sensing, and adjustable dynamic range.
| Original language | English |
|---|---|
| Title of host publication | IEEE EDSSC 2017 - The 13th IEEE International Conference on Electron Devices and Solid-State Circuits |
| Publisher | IEEE |
| Pages | 1-2 |
| ISBN (Print) | 9781538629079 |
| DOIs | |
| Publication status | Published - Oct 2017 |
| Event | 13th IEEE International Conference on Electron Devices and Solid-State Circuits (IEEE EDSSC 2017) - National Tsing Hua University, Hsinchu, Taiwan, China Duration: 18 Oct 2017 → 20 Oct 2017 Conference number: 13 http://www2.ess.nthu.edu.tw/edssc2017/ https://ieeexplore.ieee.org/xpl/conhome/8118202/proceeding |
Conference
| Conference | 13th IEEE International Conference on Electron Devices and Solid-State Circuits (IEEE EDSSC 2017) |
|---|---|
| Abbreviated title | IEEE EDSSC |
| Place | Taiwan, China |
| City | Hsinchu |
| Period | 18/10/17 → 20/10/17 |
| Internet address |
Research Keywords
- MAGFET
- Magnetic field strength sensor
- PWM output
- Voltage to time converter
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