A horseshoe micromachined resonant magnetic field sensor with high quality factor

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Detail(s)

Original languageEnglish
Article number6595578
Pages (from-to)1310-1312
Journal / PublicationIEEE Electron Device Letters
Volume34
Issue number10
Online published11 Sept 2013
Publication statusPublished - Oct 2013

Abstract

We report a magnetic field sensor shaped in the form of a horseshoe silicon micromechanical resonator. Through coupling a pair of resonating tines on one end, we are able to achieve a $Q$ of 14 400. This benefits the field sensitivity of the device, which has a linear dependence on the mechanical displacement of the tines that is caused by a Lorentz force. The strength of the magnetic field density is thus inferred from the mechanical displacement. The device has a measured sensitivity of 4.6 mm/(A • T), which agrees well with the proposed analytical model. By scaling the dimensions of the device to a lateral size similar to that of other referenced works based on similar principles, the model predicts a tenfold improvement in sensitivity in comparison. The enhancement is due to the higher $Q$, achieved by merit of the novel device topology. © 2013 IEEE.

Research Area(s)

  • High quality factor, horseshoe resonator, magnetic field sensor, microelectromechanical systems (MEMS)

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