Abstract
We report a magnetic field sensor shaped in the form of a horseshoe silicon micromechanical resonator. Through coupling a pair of resonating tines on one end, we are able to achieve a $Q$ of 14 400. This benefits the field sensitivity of the device, which has a linear dependence on the mechanical displacement of the tines that is caused by a Lorentz force. The strength of the magnetic field density is thus inferred from the mechanical displacement. The device has a measured sensitivity of 4.6 mm/(A • T), which agrees well with the proposed analytical model. By scaling the dimensions of the device to a lateral size similar to that of other referenced works based on similar principles, the model predicts a tenfold improvement in sensitivity in comparison. The enhancement is due to the higher $Q$, achieved by merit of the novel device topology. © 2013 IEEE.
| Original language | English |
|---|---|
| Article number | 6595578 |
| Pages (from-to) | 1310-1312 |
| Journal | IEEE Electron Device Letters |
| Volume | 34 |
| Issue number | 10 |
| Online published | 11 Sept 2013 |
| DOIs | |
| Publication status | Published - Oct 2013 |
Research Keywords
- High quality factor
- horseshoe resonator
- magnetic field sensor
- microelectromechanical systems (MEMS)
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