A High-Performance Self-Powered Photodetector Based on MAPbBr3 Single Crystal Thin Film/MoS2 Vertical Van Der Waals Heterostructure
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
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Detail(s)
Original language | English |
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Article number | 2200912 |
Journal / Publication | Advanced Materials Interfaces |
Volume | 9 |
Issue number | 27 |
Online published | 15 Aug 2022 |
Publication status | Published - 22 Sept 2022 |
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Abstract
Methylammonium lead bromide (MAPbBr3) single crystal thin film shows great opportunities in high-performance optoelectronic devices due to its high absorption coefficient, high photoelectric conversion efficiency, and low trap-state density properties. In order to fabricate a highly sensitive self-powered photodetectors, herein, a MAPbBr3 single crystal thin film/molybdenum disulfide (MoS2) vertical p-n heterostructure based photodetector has been built by typical polymer film assisted dry transfer method and micromachining technique. Attributing to the built-in electric field and the shortened transmit distance for the photogenerated carriers in this heterostructure, the device shows excellent photovoltaic characteristics with a maximum output electrical power of 7 nW and power conversion efficiency of 8% at 0.34 V under 532 nm laser. Moreover, prominent photoelectric properties with responsivity of 368 mA W−1 and detectivity of 3.74 × 1012 Jones for 532 nm laser without any bias have been achieved, which are ranking high among the organic–inorganic hybrid perovskites based self-power photodetectors. These results demonstrate that the MAPbBr3 single crystal thin film/MoS2 vertical heterostructure can pave a new way to develop high-performance photovoltaic devices.
Research Area(s)
- MoS 2, p-n junctions, perovskite vertical heterostructures, photodetectors, single crystal thin films
Citation Format(s)
A High-Performance Self-Powered Photodetector Based on MAPbBr3 Single Crystal Thin Film/MoS2 Vertical Van Der Waals Heterostructure. / Xu, Zhongquan; Zeng, Yonghong; Meng, Fanxu et al.
In: Advanced Materials Interfaces, Vol. 9, No. 27, 2200912, 22.09.2022.
In: Advanced Materials Interfaces, Vol. 9, No. 27, 2200912, 22.09.2022.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review