A high QM relaxor ferroelectric single crystal: Growth and characterization

Jun Luo; Wesley Hackenberger; Shujun Zhang; Thomas R. Shrout

doi:10.1109/ULTSYM.2010.5935675

A high Q_M relaxor ferroelectric single crystal: Growth and characterization

Jun Luo
, Wesley Hackenberger
, Shujun Zhang
, Thomas R. Shrout

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

21 Citations (Scopus)

Abstract

Mn doped PIN-PMN-PT single crystals with diameter of 50mm have been successfully grown by the Bridgman method along >111<, >110< and >001< orientations. The effect of the acceptor dopant, Mn, on mechanical loss and other electromechanical properties was studied in comparison with pure PIN-PMN-PT single crystal under high and low electric fields. A complete set of piezoelectric, dielectric and elastic properties was derived from resonance measurements. It was demonstrated that by doping Mn, Q_M increases 4-5 times to 700-1000 in >001<-poled longitudinal samples without any compromise in electromechanical coupling (k₃₃). Mn doped PIN-PMN-PT crystals also show strong anisotropy. For 110-poled longitudinal samples, Q _M and E_C increase to above 1000 and 8-10kV/cm, respectively, which is comparable to hard PZT ceramics. The fatigue behavior was investigated as function of crystal orientation and magnitude of the electric field. Polarization degradation was observed to suddenly occur along 110 orientation above 100 cycles of 15kV/cm bipolar field, while nearly no fatigue was seen along >001< orientation. © 2010 IEEE.

Original language	English
Title of host publication	2010 IEEE International Ultrasonics Symposium, IUS 2010
Pages	68-71
DOIs	https://doi.org/10.1109/ULTSYM.2010.5935675
Publication status	Published - 2010
Externally published	Yes
Event	2010 IEEE International Ultrasonics Symposium, IUS 2010 - San Diego, CA, United States Duration: 11 Oct 2010 → 14 Oct 2010

Publication series

Name	Proceedings - IEEE Ultrasonics Symposium
ISSN (Print)	1051-0117

Conference

Conference	2010 IEEE International Ultrasonics Symposium, IUS 2010
Place	United States
City	San Diego, CA
Period	11/10/10 → 14/10/10

Bibliographical note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

Funding

This work was supported by ONR through a STTR program under Contract No. N00014-07-C-0858.

Research Keywords

electromechanical propertie
ferroelectric material
mechanical quality factor
Mn
PIN-PMN-PT
single crystal

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Cite this

@inproceedings{65b2bf803bea4a5cbc424a380ee17eff,

title = "A high QM relaxor ferroelectric single crystal: Growth and characterization",

abstract = "Mn doped PIN-PMN-PT single crystals with diameter of 50mm have been successfully grown by the Bridgman method along >111<, >110< and >001< orientations. The effect of the acceptor dopant, Mn, on mechanical loss and other electromechanical properties was studied in comparison with pure PIN-PMN-PT single crystal under high and low electric fields. A complete set of piezoelectric, dielectric and elastic properties was derived from resonance measurements. It was demonstrated that by doping Mn, QM increases 4-5 times to 700-1000 in >001<-poled longitudinal samples without any compromise in electromechanical coupling (k33). Mn doped PIN-PMN-PT crystals also show strong anisotropy. For 110-poled longitudinal samples, Q M and EC increase to above 1000 and 8-10kV/cm, respectively, which is comparable to hard PZT ceramics. The fatigue behavior was investigated as function of crystal orientation and magnitude of the electric field. Polarization degradation was observed to suddenly occur along 110 orientation above 100 cycles of 15kV/cm bipolar field, while nearly no fatigue was seen along >001< orientation. {\textcopyright} 2010 IEEE.",

keywords = "electromechanical propertie, ferroelectric material, mechanical quality factor, Mn, PIN-PMN-PT, single crystal",

author = "Jun Luo and Wesley Hackenberger and Shujun Zhang and Shrout, \{Thomas R.\}",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].; 2010 IEEE International Ultrasonics Symposium, IUS 2010 ; Conference date: 11-10-2010 Through 14-10-2010",

year = "2010",

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language = "English",

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Luo, J, Hackenberger, W, Zhang, S & Shrout, TR 2010, A high Q_M relaxor ferroelectric single crystal: Growth and characterization. in 2010 IEEE International Ultrasonics Symposium, IUS 2010., 5935675, Proceedings - IEEE Ultrasonics Symposium, pp. 68-71, 2010 IEEE International Ultrasonics Symposium, IUS 2010, San Diego, CA, United States, 11/10/10. https://doi.org/10.1109/ULTSYM.2010.5935675

A high Q_M relaxor ferroelectric single crystal: Growth and characterization. / Luo, Jun; Hackenberger, Wesley; Zhang, Shujun et al.
2010 IEEE International Ultrasonics Symposium, IUS 2010. 2010. p. 68-71 5935675 (Proceedings - IEEE Ultrasonics Symposium).

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

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AU - Shrout, Thomas R.

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N2 - Mn doped PIN-PMN-PT single crystals with diameter of 50mm have been successfully grown by the Bridgman method along >111<, >110< and >001< orientations. The effect of the acceptor dopant, Mn, on mechanical loss and other electromechanical properties was studied in comparison with pure PIN-PMN-PT single crystal under high and low electric fields. A complete set of piezoelectric, dielectric and elastic properties was derived from resonance measurements. It was demonstrated that by doping Mn, QM increases 4-5 times to 700-1000 in >001<-poled longitudinal samples without any compromise in electromechanical coupling (k33). Mn doped PIN-PMN-PT crystals also show strong anisotropy. For 110-poled longitudinal samples, Q M and EC increase to above 1000 and 8-10kV/cm, respectively, which is comparable to hard PZT ceramics. The fatigue behavior was investigated as function of crystal orientation and magnitude of the electric field. Polarization degradation was observed to suddenly occur along 110 orientation above 100 cycles of 15kV/cm bipolar field, while nearly no fatigue was seen along >001< orientation. © 2010 IEEE.

AB - Mn doped PIN-PMN-PT single crystals with diameter of 50mm have been successfully grown by the Bridgman method along >111<, >110< and >001< orientations. The effect of the acceptor dopant, Mn, on mechanical loss and other electromechanical properties was studied in comparison with pure PIN-PMN-PT single crystal under high and low electric fields. A complete set of piezoelectric, dielectric and elastic properties was derived from resonance measurements. It was demonstrated that by doping Mn, QM increases 4-5 times to 700-1000 in >001<-poled longitudinal samples without any compromise in electromechanical coupling (k33). Mn doped PIN-PMN-PT crystals also show strong anisotropy. For 110-poled longitudinal samples, Q M and EC increase to above 1000 and 8-10kV/cm, respectively, which is comparable to hard PZT ceramics. The fatigue behavior was investigated as function of crystal orientation and magnitude of the electric field. Polarization degradation was observed to suddenly occur along 110 orientation above 100 cycles of 15kV/cm bipolar field, while nearly no fatigue was seen along >001< orientation. © 2010 IEEE.

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