A high mobility C 60 field-effect transistor with an ultrathin pentacene passivation layer and bathophenanthroline/metal bilayer electrodes

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • Jian-Lin Zhou
  • Jun-Sheng Yu
  • Xin-Ge Yu
  • Xin-Yang Cai

Detail(s)

Original languageEnglish
Article number027305
Journal / PublicationChinese Physics B
Volume21
Issue number2
Publication statusPublished - Feb 2012
Externally publishedYes

Abstract

C 60 field-effect transistor (OFET) with a mobility as high as 5.17 cm 2/Vs is fabricated. In our experiment, an ultrathin pentacene passivation layer on poly-(methyl methacrylate) (PMMA) insulator and a bathophenanthroline (Bphen)/Ag bilayer electrode are prepared. The OFET shows a significant enhancement of electron mobility compared with the corresponding device with a single PMMA insultor and an Ag electrode. By analysing the C 60 film with atomic force microscopy and X-ray diffraction techniques, it is shown that the pentacene passivation layer can contribute to C 60 film growth with the large grain size and significantly improve crystallinity. Moreover, the Bphen buffer layer can reduce the electron contact barrier from Ag electrodes to C 60 film efficiently. 

Research Area(s)

  • Bphen, C 60, organic field-effect transistors, passivation layer