A hierarchical intelligent methodology for spatiotemporal control of wafer temperature in rapid thermal processing
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
Original language | English |
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Article number | 7590160 |
Pages (from-to) | 52-59 |
Journal / Publication | IEEE Transactions on Semiconductor Manufacturing |
Volume | 30 |
Issue number | 1 |
Publication status | Published - 1 Feb 2017 |
Link(s)
Abstract
Rapid thermal processing (RTP) is very important for semiconductor manufacturing. The RTP is actually a spatially distributed dynamical system (SDDS) with multiple control sources. Due to its highly nonlinear and spatiotemporal dynamics, it would be difficult to maintain the temperature uniformity inside the RTP. In this paper, a hierarchical intelligent methodology is proposed for the spatiotemporal control of RTP. The control scheme consists of three different levels. At the lower level, the decomposition strategy is taken to divide the SDDS into several relatively simple subsystems; each of them is handled by one control source. At the mid-level, 3-D fuzzy logic controllers (3-D-FLCs) are designed, which have inherent capability to process spatiotemporal dynamics, to maintain the temperature uniformity of each subsystem. At the upper level, a local coordination strategy will be designed to adjust 3-D-FLCs to overcome interactions between the adjacent subsystems. The proposed scheme is applied to the temperature uniformity control of a rapid thermal chemical vapor deposition system, and better temperature uniformity can be achieved.
Research Area(s)
- distributed parameter systems, fuzzy control, intelligent systems, Rapid thermal processing
Citation Format(s)
A hierarchical intelligent methodology for spatiotemporal control of wafer temperature in rapid thermal processing. / Zhang, Xian-Xia; Li, Han-Xiong; Wang, Bing et al.
In: IEEE Transactions on Semiconductor Manufacturing, Vol. 30, No. 1, 7590160, 01.02.2017, p. 52-59.
In: IEEE Transactions on Semiconductor Manufacturing, Vol. 30, No. 1, 7590160, 01.02.2017, p. 52-59.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review