TY - JOUR
T1 - A general synthetic route to III-V compound semiconductor nanowires
AU - Shi, Wensheng
AU - Zheng, Yufeng F.
AU - Wang, Ning
AU - Lee, Chun-Sing
AU - Lee, Shuit-Tong
PY - 2001/4
Y1 - 2001/4
N2 - The oxide-assisted method for the synthesis of gallium arsenide nanowires reported here has the advantage of requiring neither a metal catalyst nor a template, which simplifies the purification and subsequent application of the wires. An SEM image of the nanowires is shown in the Figure. The results of a TEM examination are reported and a growth mechanism is proposed. © WILEY-VCH Verlag GmbH, D-69469 Weinheim, 2001
AB - The oxide-assisted method for the synthesis of gallium arsenide nanowires reported here has the advantage of requiring neither a metal catalyst nor a template, which simplifies the purification and subsequent application of the wires. An SEM image of the nanowires is shown in the Figure. The results of a TEM examination are reported and a growth mechanism is proposed. © WILEY-VCH Verlag GmbH, D-69469 Weinheim, 2001
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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0035906158&origin=recordpage
U2 - 10.1002/1521-4095(200104)13:8<591::aid-adma591>3.0.co;2-%23
DO - 10.1002/1521-4095(200104)13:8<591::aid-adma591>3.0.co;2-%23
M3 - RGC 21 - Publication in refereed journal
SN - 0935-9648
VL - 13
SP - 591
EP - 594
JO - Advanced Materials
JF - Advanced Materials
IS - 8
ER -