A Fully Transparent Resistive Memory for Harsh Environments

Po-Kang Yang; Chih-Hsiang Ho; Der-Hsien Lien; José Ramón Durán Retamal; Chen-Fang Kang; Kuan-Ming Chen; Teng-Han Huang; Yueh-Chung Yu; Chih-I Wu; Jr-Hau He

doi:10.1038/srep15087

A Fully Transparent Resistive Memory for Harsh Environments

Po-Kang Yang, Chih-Hsiang Ho, Der-Hsien Lien, José Ramón Durán Retamal, Chen-Fang Kang, Kuan-Ming Chen, Teng-Han Huang, Yueh-Chung Yu, Chih-I Wu, Jr-Hau He^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

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Abstract

A fully transparent resistive memory (TRRAM) based on Hafnium oxide (HfO₂) with excellent transparency, resistive switching capability, and environmental stability is demonstrated. The retention time measured at 85 °C is over 3 × 10⁴sec, and no significant degradation is observed in 130 cycling test. Compared with ZnO TRRAM, HfO₂ TRRAM shows reliable performance under harsh conditions, such as high oxygen partial pressure, high moisture (relative humidity = 90% at 85 °C), corrosive agent exposure, and proton irradiation. Moreover, HfO₂ TRRAM fabricated in cross-bar array structures manifests the feasibility of future high density memory applications. These findings not only pave the way for future TRRAM design, but also demonstrate the promising applicability of HfO₂ TRRAM for harsh environments.

Original language	English
Article number	15087
Journal	Scientific Reports
Volume	5
Online published	12 Oct 2015
DOIs	https://doi.org/10.1038/srep15087
Publication status	Published - 2015
Externally published	Yes

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This full text is made available under CC-BY 4.0. https://creativecommons.org/licenses/by/4.0/

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title = "A Fully Transparent Resistive Memory for Harsh Environments",

abstract = "A fully transparent resistive memory (TRRAM) based on Hafnium oxide (HfO2) with excellent transparency, resistive switching capability, and environmental stability is demonstrated. The retention time measured at 85 °C is over 3 × 104sec, and no significant degradation is observed in 130 cycling test. Compared with ZnO TRRAM, HfO2 TRRAM shows reliable performance under harsh conditions, such as high oxygen partial pressure, high moisture (relative humidity = 90% at 85 °C), corrosive agent exposure, and proton irradiation. Moreover, HfO2 TRRAM fabricated in cross-bar array structures manifests the feasibility of future high density memory applications. These findings not only pave the way for future TRRAM design, but also demonstrate the promising applicability of HfO2 TRRAM for harsh environments.",

author = "Po-Kang Yang and Chih-Hsiang Ho and Der-Hsien Lien and {Dur{\'a}n Retamal}, {Jos{\'e} Ram{\'o}n} and Chen-Fang Kang and Kuan-Ming Chen and Teng-Han Huang and Yueh-Chung Yu and Chih-I Wu and Jr-Hau He",

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doi = "10.1038/srep15087",

language = "English",

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journal = "Scientific Reports",

issn = "2045-2322",

publisher = "Nature Publishing Group",

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T1 - A Fully Transparent Resistive Memory for Harsh Environments

AU - Yang, Po-Kang

AU - Ho, Chih-Hsiang

AU - Lien, Der-Hsien

AU - Durán Retamal, José Ramón

AU - Kang, Chen-Fang

AU - Chen, Kuan-Ming

AU - Huang, Teng-Han

AU - Yu, Yueh-Chung

AU - Wu, Chih-I

AU - He, Jr-Hau

PY - 2015

Y1 - 2015

N2 - A fully transparent resistive memory (TRRAM) based on Hafnium oxide (HfO2) with excellent transparency, resistive switching capability, and environmental stability is demonstrated. The retention time measured at 85 °C is over 3 × 104sec, and no significant degradation is observed in 130 cycling test. Compared with ZnO TRRAM, HfO2 TRRAM shows reliable performance under harsh conditions, such as high oxygen partial pressure, high moisture (relative humidity = 90% at 85 °C), corrosive agent exposure, and proton irradiation. Moreover, HfO2 TRRAM fabricated in cross-bar array structures manifests the feasibility of future high density memory applications. These findings not only pave the way for future TRRAM design, but also demonstrate the promising applicability of HfO2 TRRAM for harsh environments.

AB - A fully transparent resistive memory (TRRAM) based on Hafnium oxide (HfO2) with excellent transparency, resistive switching capability, and environmental stability is demonstrated. The retention time measured at 85 °C is over 3 × 104sec, and no significant degradation is observed in 130 cycling test. Compared with ZnO TRRAM, HfO2 TRRAM shows reliable performance under harsh conditions, such as high oxygen partial pressure, high moisture (relative humidity = 90% at 85 °C), corrosive agent exposure, and proton irradiation. Moreover, HfO2 TRRAM fabricated in cross-bar array structures manifests the feasibility of future high density memory applications. These findings not only pave the way for future TRRAM design, but also demonstrate the promising applicability of HfO2 TRRAM for harsh environments.

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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84943736487&origin=recordpage

U2 - 10.1038/srep15087

DO - 10.1038/srep15087

M3 - RGC 21 - Publication in refereed journal

C2 - 26455819

SN - 2045-2322

VL - 5

JO - Scientific Reports

JF - Scientific Reports

M1 - 15087

ER -

A Fully Transparent Resistive Memory for Harsh Environments

Abstract

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