TY - JOUR
T1 - A facile approach for the synthesis of Cu2-x Se nanowires and their field emission properties
AU - Zou, Rujia
AU - Zhang, Zhenyu
AU - Liu, Qian
AU - Xu, Kaibing
AU - He, Guanjie
AU - Hu, Junqing
PY - 2014/1
Y1 - 2014/1
N2 - Single-crystalline Cu2-x Se nanowires with high aspect ratio on copper substrate have been achieved by a simple hydrothermal route. Based on in situ TEM studies, while utilizing integrated STM holder measuring their electrical conductivities, it is confirmed that single-crystalline Cu 2-x Se nanowire was very good match the semiconducting characteristic. An electron source device using as-prepared Cu2-x Se nanowires on the Cu substrate has been first fabricated, which shows excellent field emission (FE) properties: the emitting current density as high as 0.83 μA/cm2 at an applied field of 5.5 V/μm, suggesting that the Cu2-x Se nanowire may be potentially applied in the vacuum microelectronics industry. Graphical Abstract: Single-crystalline Cu 2-x Se nanowires with high aspect ratio on copper substrate have been achieved by a simple hydrothermal route. In-situ electricity properties measurement clearly illustrated that the Cu2-x Se nanowires exhibited excellent electronic properties. An electron source device using as-prepared Cu2-x Se nanowires on the Cu substrate has been first fabricated that shows excellent FE properties.[Figure not available: see fulltext.] © 2013 Springer Science+Business Media New York.
AB - Single-crystalline Cu2-x Se nanowires with high aspect ratio on copper substrate have been achieved by a simple hydrothermal route. Based on in situ TEM studies, while utilizing integrated STM holder measuring their electrical conductivities, it is confirmed that single-crystalline Cu 2-x Se nanowire was very good match the semiconducting characteristic. An electron source device using as-prepared Cu2-x Se nanowires on the Cu substrate has been first fabricated, which shows excellent field emission (FE) properties: the emitting current density as high as 0.83 μA/cm2 at an applied field of 5.5 V/μm, suggesting that the Cu2-x Se nanowire may be potentially applied in the vacuum microelectronics industry. Graphical Abstract: Single-crystalline Cu 2-x Se nanowires with high aspect ratio on copper substrate have been achieved by a simple hydrothermal route. In-situ electricity properties measurement clearly illustrated that the Cu2-x Se nanowires exhibited excellent electronic properties. An electron source device using as-prepared Cu2-x Se nanowires on the Cu substrate has been first fabricated that shows excellent FE properties.[Figure not available: see fulltext.] © 2013 Springer Science+Business Media New York.
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U2 - 10.1007/s10853-013-7731-9
DO - 10.1007/s10853-013-7731-9
M3 - RGC 21 - Publication in refereed journal
SN - 0022-2461
VL - 49
SP - 532
EP - 537
JO - Journal of Materials Science
JF - Journal of Materials Science
IS - 2
ER -