A dual-band CMOS low noise amplifier for wireless communication
Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45) › 32_Refereed conference paper (with host publication) › peer-review
Author(s)
Related Research Unit(s)
Detail(s)
| Original language | English |
|---|---|
| Title of host publication | IET Conference Publications |
| Pages | 461-464 |
| Volume | 2011 |
| Publication status | Published - 2011 |
Publication series
| Name | |
|---|---|
| Volume | 2011 |
Conference
| Title | IET International Communication Conference on Wireless Mobile and Computing, CCWMC 2011 |
|---|---|
| Place | China |
| City | Shanghai |
| Period | 14 - 16 November 2011 |
Link(s)
Abstract
A dual-band 900 MHz and 2.4 GHz Low Noise Amplifier (LNA) for wireless communication is designed. The gains achieved are both 16 dB and the resulting noise figures are about 2.5 dB and 2.7 dB, respectively. The input and the output reflections are below -10 dB in both bands. The amplifier works at 2.5 V supply voltage with 12 mA current dissipation.
Research Area(s)
- dual-band, Low Noise Amplifier (LNA), noise figure (NF), wireless communication
Citation Format(s)
A dual-band CMOS low noise amplifier for wireless communication. / Shen, Yi; Kuo, Chiu Hoi; Lee, Wah Ching et al.
IET Conference Publications. Vol. 2011 2011. p. 461-464.
IET Conference Publications. Vol. 2011 2011. p. 461-464.
Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45) › 32_Refereed conference paper (with host publication) › peer-review
