A double-layer current conduction model for high-κ gate dielectric materials with interfacial oxide or silicate layer

V. Filip; H. Wong; B. Sen; D. Nicolaescu; C. K. Sarkar

doi:10.1016/j.mee.2006.01.137

A double-layer current conduction model for high-κ gate dielectric materials with interfacial oxide or silicate layer

V. Filip
, H. Wong
, B. Sen
, D. Nicolaescu
, C. K. Sarkar

Department of Electrical Engineering

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

3 Citations (Scopus)

Abstract

The current-voltage (I-V) characteristics of metal-oxide-semiconductor (MOS) structures with hafnium oxide as the gate dielectric film were studied. Sharp shifts from a low-voltage ohmic regime to a tunneling conduction were observed in the high-voltage range. The paper demonstrates that this behavior can be described very well with a double-layer dielectric model. Excellent fittings of the experimental curves were obtained and the related key structural and physical parameters were obtained. The model fitting further suggests the optimal annealing conditions for preparing the hafnium oxide films. © 2006 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	1950-1956
Journal	Microelectronic Engineering
Volume	83
Issue number	10
DOIs	https://doi.org/10.1016/j.mee.2006.01.137
Publication status	Published - Oct 2006

Research Keywords

Current conduction
Hafnium oxide
MOS structure

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10.1016/j.mee.2006.01.137

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@article{5440960e227c442495ef9847280dfb9f,

title = "A double-layer current conduction model for high-κ gate dielectric materials with interfacial oxide or silicate layer",

abstract = "The current-voltage (I-V) characteristics of metal-oxide-semiconductor (MOS) structures with hafnium oxide as the gate dielectric film were studied. Sharp shifts from a low-voltage ohmic regime to a tunneling conduction were observed in the high-voltage range. The paper demonstrates that this behavior can be described very well with a double-layer dielectric model. Excellent fittings of the experimental curves were obtained and the related key structural and physical parameters were obtained. The model fitting further suggests the optimal annealing conditions for preparing the hafnium oxide films. {\textcopyright} 2006 Elsevier B.V. All rights reserved.",

keywords = "Current conduction, Hafnium oxide, MOS structure",

author = "V. Filip and H. Wong and B. Sen and D. Nicolaescu and Sarkar, \{C. K.\}",

year = "2006",

month = oct,

doi = "10.1016/j.mee.2006.01.137",

language = "English",

volume = "83",

pages = "1950--1956",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

number = "10",

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TY - JOUR

T1 - A double-layer current conduction model for high-κ gate dielectric materials with interfacial oxide or silicate layer

AU - Filip, V.

AU - Wong, H.

AU - Sen, B.

AU - Nicolaescu, D.

AU - Sarkar, C. K.

PY - 2006/10

Y1 - 2006/10

N2 - The current-voltage (I-V) characteristics of metal-oxide-semiconductor (MOS) structures with hafnium oxide as the gate dielectric film were studied. Sharp shifts from a low-voltage ohmic regime to a tunneling conduction were observed in the high-voltage range. The paper demonstrates that this behavior can be described very well with a double-layer dielectric model. Excellent fittings of the experimental curves were obtained and the related key structural and physical parameters were obtained. The model fitting further suggests the optimal annealing conditions for preparing the hafnium oxide films. © 2006 Elsevier B.V. All rights reserved.

AB - The current-voltage (I-V) characteristics of metal-oxide-semiconductor (MOS) structures with hafnium oxide as the gate dielectric film were studied. Sharp shifts from a low-voltage ohmic regime to a tunneling conduction were observed in the high-voltage range. The paper demonstrates that this behavior can be described very well with a double-layer dielectric model. Excellent fittings of the experimental curves were obtained and the related key structural and physical parameters were obtained. The model fitting further suggests the optimal annealing conditions for preparing the hafnium oxide films. © 2006 Elsevier B.V. All rights reserved.

KW - Current conduction

KW - Hafnium oxide

KW - MOS structure

UR - https://www.scopus.com/pages/publications/33745132420

UR - https://www.scopus.com/pages/publications/33745132420#tab=impact

U2 - 10.1016/j.mee.2006.01.137

DO - 10.1016/j.mee.2006.01.137

M3 - RGC 21 - Publication in refereed journal

SN - 0167-9317

VL - 83

SP - 1950

EP - 1956

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 10

ER -

A double-layer current conduction model for high-κ gate dielectric materials with interfacial oxide or silicate layer

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Research Keywords

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