A direct measurement of electromigration induced drift velocity in Cu dual damascene interconnects

M. Y. Yan; K. N. Tu; A. V. Vairagar; S. G. Mhaisalkar; Ahila Krishnamoorthy

doi:10.1016/j.microrel.2005.11.004

A direct measurement of electromigration induced drift velocity in Cu dual damascene interconnects

M. Y. Yan
, K. N. Tu
, A. V. Vairagar
, S. G. Mhaisalkar
, Ahila Krishnamoorthy

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

7 Citations (Scopus)

Abstract

A dual damascene structure with an additional 25 nm Ta diffusion barrier embedded into the upper Cu layer was fabricated to measure the drift velocity of electromigration. The embedded diffusion barrier layer successfully confined void growth into a long and regular shape between the SiN layer and embedded Ta layer. Edge depletion was observed to initiate from the cathode end and elongate into a long and regular shape due to the confinement of the intermediate Ta diffusion barrier layer. With this test structure, electromigration induced drift displacement can be accurately measured with a linear dependence on time. Measurement was conducted at a series of temperatures to obtain the Cu/capping interface diffusion controlled activation energy. © 2005.

Original language	English
Pages (from-to)	1392-1395
Journal	Microelectronics Reliability
Volume	46
Issue number	8
DOIs	https://doi.org/10.1016/j.microrel.2005.11.004
Publication status	Published - Aug 2006
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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title = "A direct measurement of electromigration induced drift velocity in Cu dual damascene interconnects",

abstract = "A dual damascene structure with an additional 25 nm Ta diffusion barrier embedded into the upper Cu layer was fabricated to measure the drift velocity of electromigration. The embedded diffusion barrier layer successfully confined void growth into a long and regular shape between the SiN layer and embedded Ta layer. Edge depletion was observed to initiate from the cathode end and elongate into a long and regular shape due to the confinement of the intermediate Ta diffusion barrier layer. With this test structure, electromigration induced drift displacement can be accurately measured with a linear dependence on time. Measurement was conducted at a series of temperatures to obtain the Cu/capping interface diffusion controlled activation energy. {\textcopyright} 2005.",

author = "Yan, \{M. Y.\} and Tu, \{K. N.\} and Vairagar, \{A. V.\} and Mhaisalkar, \{S. G.\} and Ahila Krishnamoorthy",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].",

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month = aug,

doi = "10.1016/j.microrel.2005.11.004",

language = "English",

volume = "46",

pages = "1392--1395",

journal = "Microelectronics Reliability",

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TY - JOUR

T1 - A direct measurement of electromigration induced drift velocity in Cu dual damascene interconnects

AU - Yan, M. Y.

AU - Tu, K. N.

AU - Vairagar, A. V.

AU - Mhaisalkar, S. G.

AU - Krishnamoorthy, Ahila

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2006/8

Y1 - 2006/8

N2 - A dual damascene structure with an additional 25 nm Ta diffusion barrier embedded into the upper Cu layer was fabricated to measure the drift velocity of electromigration. The embedded diffusion barrier layer successfully confined void growth into a long and regular shape between the SiN layer and embedded Ta layer. Edge depletion was observed to initiate from the cathode end and elongate into a long and regular shape due to the confinement of the intermediate Ta diffusion barrier layer. With this test structure, electromigration induced drift displacement can be accurately measured with a linear dependence on time. Measurement was conducted at a series of temperatures to obtain the Cu/capping interface diffusion controlled activation energy. © 2005.

AB - A dual damascene structure with an additional 25 nm Ta diffusion barrier embedded into the upper Cu layer was fabricated to measure the drift velocity of electromigration. The embedded diffusion barrier layer successfully confined void growth into a long and regular shape between the SiN layer and embedded Ta layer. Edge depletion was observed to initiate from the cathode end and elongate into a long and regular shape due to the confinement of the intermediate Ta diffusion barrier layer. With this test structure, electromigration induced drift displacement can be accurately measured with a linear dependence on time. Measurement was conducted at a series of temperatures to obtain the Cu/capping interface diffusion controlled activation energy. © 2005.

UR - https://www.scopus.com/pages/publications/33746189599

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-33746189599&origin=recordpage

U2 - 10.1016/j.microrel.2005.11.004

DO - 10.1016/j.microrel.2005.11.004

M3 - RGC 21 - Publication in refereed journal

SN - 0026-2714

VL - 46

SP - 1392

EP - 1395

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 8

ER -

A direct measurement of electromigration induced drift velocity in Cu dual damascene interconnects

Abstract

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