A Controlled Heating Rate Baking Protocol for The Synthesis of Bismuth Vanadate Thin Films

一種合成釩酸鉍薄膜的可控加熱速率烘焙方案

Research output: Patents, Agreements and Assignments (RGC: 51, 52, 53) › 51_Patents granted (CityU only, data source from KTO)

Overview

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Author(s)

Rafiqat Ul RASOOL (Inventor)
Ruiqin ZHANG (Inventor)

Related Research Unit(s)

Department of Physics

Detail(s)

Original language	English
Filing number	63/315,575
Publication status	Accepted/In press/Filed - 2 Mar 2022

Link(s)

	Check@CityULib
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(09728bde-f012-40fe-b718-08ee7c380286).html

Citation Format(s)

[ RIS ] [ BibTeX ]

A Controlled Heating Rate Baking Protocol for The Synthesis of Bismuth Vanadate Thin Films. / RASOOL, Rafiqat Ul (Inventor); ZHANG, Ruiqin (Inventor).

Mar 02, 2022.

Research output: Patents, Agreements and Assignments (RGC: 51, 52, 53) › 51_Patents granted (CityU only, data source from KTO)

RASOOL, RU & ZHANG, R Mar. 02 2022, A Controlled Heating Rate Baking Protocol for The Synthesis of Bismuth Vanadate Thin Films.

RASOOL, R. U., & ZHANG, R. (Accepted/In press). A Controlled Heating Rate Baking Protocol for The Synthesis of Bismuth Vanadate Thin Films.

RASOOL RU , ZHANG R, inventors. A Controlled Heating Rate Baking Protocol for The Synthesis of Bismuth Vanadate Thin Films. 2022 Mar 2.

RASOOL, Rafiqat Ul (Inventor) ; ZHANG, Ruiqin (Inventor). / A Controlled Heating Rate Baking Protocol for The Synthesis of Bismuth Vanadate Thin Films. Mar 02, 2022.