A consistent charge model of GaAs MESFETs for Ku-band power amplifiers

Zheng Zhong; Yong-Xin Guo; Mook Seng Leong

doi:10.1109/TMTT.2011.2160193

A consistent charge model of GaAs MESFETs for Ku-band power amplifiers

Zheng Zhong
, Yong-Xin Guo
, Mook Seng Leong

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

6 Citations (Scopus)

Abstract

In this paper, a consistent gate charge model for GaAs MESFETs based upon charge conservation is proposed for monolithic microwave integrated circuit power amplifier designs. This new model is capable of accurately modeling the transistor under various biasing conditions. The conventional approaches for charge modeling of GaAs MESFETs usually adopt analytical equations to fit nonlinear gate capacitors separately, which might be difficult to implement in circuit simulators whose capacitance is always the derivative of an internal state variable (charge). Moreover, compared with the conventional diode and Statz model, the performance prediction in the linear region, saturation knee region, and subthreshold region is greatly improved. Measured and modeled results of a 2 × 150 μm GaAs MESFET are compared and good agreement has been obtained. Comparisons between the proposed model, diode junction model, and Statz model are also presented in this paper. In addition, a class-AB Ku-band power amplifier using a 0.18-μm GaAs MESFET process was designed with the new model for verification of the new model accuracy. © 2011 IEEE.

Original language	English
Article number	5960001
Pages (from-to)	2246-2253
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	59
Issue number	9
DOIs	https://doi.org/10.1109/TMTT.2011.2160193
Publication status	Published - Sept 2011
Externally published	Yes

Bibliographical note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

Research Keywords

GaAs MESFET
large-signal model
power amplifier

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title = "A consistent charge model of GaAs MESFETs for Ku-band power amplifiers",

abstract = "In this paper, a consistent gate charge model for GaAs MESFETs based upon charge conservation is proposed for monolithic microwave integrated circuit power amplifier designs. This new model is capable of accurately modeling the transistor under various biasing conditions. The conventional approaches for charge modeling of GaAs MESFETs usually adopt analytical equations to fit nonlinear gate capacitors separately, which might be difficult to implement in circuit simulators whose capacitance is always the derivative of an internal state variable (charge). Moreover, compared with the conventional diode and Statz model, the performance prediction in the linear region, saturation knee region, and subthreshold region is greatly improved. Measured and modeled results of a 2 × 150 μm GaAs MESFET are compared and good agreement has been obtained. Comparisons between the proposed model, diode junction model, and Statz model are also presented in this paper. In addition, a class-AB Ku-band power amplifier using a 0.18-μm GaAs MESFET process was designed with the new model for verification of the new model accuracy. {\textcopyright} 2011 IEEE.",

keywords = "GaAs MESFET, large-signal model, power amplifier",

author = "Zheng Zhong and Yong-Xin Guo and Leong, \{Mook Seng\}",

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AU - Zhong, Zheng

AU - Guo, Yong-Xin

AU - Leong, Mook Seng

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2011/9

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N2 - In this paper, a consistent gate charge model for GaAs MESFETs based upon charge conservation is proposed for monolithic microwave integrated circuit power amplifier designs. This new model is capable of accurately modeling the transistor under various biasing conditions. The conventional approaches for charge modeling of GaAs MESFETs usually adopt analytical equations to fit nonlinear gate capacitors separately, which might be difficult to implement in circuit simulators whose capacitance is always the derivative of an internal state variable (charge). Moreover, compared with the conventional diode and Statz model, the performance prediction in the linear region, saturation knee region, and subthreshold region is greatly improved. Measured and modeled results of a 2 × 150 μm GaAs MESFET are compared and good agreement has been obtained. Comparisons between the proposed model, diode junction model, and Statz model are also presented in this paper. In addition, a class-AB Ku-band power amplifier using a 0.18-μm GaAs MESFET process was designed with the new model for verification of the new model accuracy. © 2011 IEEE.

AB - In this paper, a consistent gate charge model for GaAs MESFETs based upon charge conservation is proposed for monolithic microwave integrated circuit power amplifier designs. This new model is capable of accurately modeling the transistor under various biasing conditions. The conventional approaches for charge modeling of GaAs MESFETs usually adopt analytical equations to fit nonlinear gate capacitors separately, which might be difficult to implement in circuit simulators whose capacitance is always the derivative of an internal state variable (charge). Moreover, compared with the conventional diode and Statz model, the performance prediction in the linear region, saturation knee region, and subthreshold region is greatly improved. Measured and modeled results of a 2 × 150 μm GaAs MESFET are compared and good agreement has been obtained. Comparisons between the proposed model, diode junction model, and Statz model are also presented in this paper. In addition, a class-AB Ku-band power amplifier using a 0.18-μm GaAs MESFET process was designed with the new model for verification of the new model accuracy. © 2011 IEEE.

KW - GaAs MESFET

KW - large-signal model

KW - power amplifier

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DO - 10.1109/TMTT.2011.2160193

M3 - RGC 21 - Publication in refereed journal

SN - 0018-9480

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JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

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ER -

A consistent charge model of GaAs MESFETs for Ku-band power amplifiers

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