A charge-based low-power high-SNR capacitive sensing interface circuit

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Sheng-Yu Peng
  • Muhammad S. Qureshi
  • Paul E. Hasler
  • Arindam Basu
  • F. Levent Degertekin

Detail(s)

Original languageEnglish
Pages (from-to)1863-1872
Journal / PublicationIEEE Transactions on Circuits and Systems I: Regular Papers
Volume55
Issue number7
Publication statusPublished - Aug 2008
Externally publishedYes

Abstract

This paper describes a low-power approach to capacitive sensing that achieves a high signal-to-noise ratio (SNR). The circuit is composed of a capacitive feedback charge amplifier and a charge adaptation circuit. Without the adaptation circuit, the charge amplifier only consumes 1 μW to achieve the audio band SNR of 69.34 dB. An adaptation scheme using Fowler-Nordheim tunneling and channel hot-electron injection mechanisms to stabilize the dc output voltage is demonstrated. This scheme provides a very low frequency pole at 0.2 Hz. The measured noise spectrums show that this slow-time scale adaptation does not degrade the circuit performance. The dc path can also be provided by a large feedback resistance without causing extra power consumption. A charge amplifier with a MOS-bipolar pseudo-resistor feedback scheme is interfaced with a capacitive micromachined ultrasonic transducer to demonstrate the feasibility of this approach for ultrasound applications. © 2008 IEEE.

Research Area(s)

  • Capacitive circuit, Capacitive sensing circuit, Channel hot-electron injection, Charge amplifier, Floating-gate circuit, Fowler-Nordheim tunneling, MEMS microphone interface circuit

Bibliographic Note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to lbscholars@cityu.edu.hk.

Citation Format(s)

A charge-based low-power high-SNR capacitive sensing interface circuit. / Peng, Sheng-Yu; Qureshi, Muhammad S.; Hasler, Paul E. et al.

In: IEEE Transactions on Circuits and Systems I: Regular Papers, Vol. 55, No. 7, 08.2008, p. 1863-1872.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review