A Campact GaN Dual-band SPDT Switch with Coupled Technique

Xu Yan; Jingyuan Zhang; Si-Ping Gao; Yongxin Guo

doi:10.1109/RFIT60557.2024.10812436

A Campact GaN Dual-band SPDT Switch with Coupled Technique

Xu Yan^*
, Jingyuan Zhang
, Si-Ping Gao
, Yongxin Guo^*

^*Corresponding author for this work

Department of Electrical Engineering

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

1 Citation (Scopus)

Abstract

This paper presents a dual-band GaN MMIC SPDT switch design. Utilizing a novel on-chip coupled-line (OCL) topology, the input signal can be directed into either low- or highband paths, thereby achieving dual-band characteristics. The operating frequencies for the low- and high-bands are determined by carefully selecting the electrical lengths of the OCLs and the device size for the corresponding shunt-FETs. This design approach results in improved insertion loss (IL) and isolation (ISO) within a compact structure. With the proposed techniques, an SPDT circuit has been fabricated in a 0.25-mu m GaN-on-SiC process. The SPDT consists of a low-band path and a high-band path, achieving an average IL/ISO of 1.0/32 dB with the best input 1-dB compression points (IP1dB) of 37.2 dBm in the low-band of DC-15 GHz, and an average IL/ISO of 2.0/28.5 dB with the best IP1dB of 32.8 dBm in the high-band of 20-40 GHz. Additionally, the return loss is better than 11 dB for each port. © 2024 IEEE

Original language	English
Title of host publication	The 2024 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT2024)
Subtitle of host publication	Proceedings
Publisher	IEEE
Number of pages	3
ISBN (Electronic)	979-8-3315-4109-5
ISBN (Print)	979-8-3315-4110-1
DOIs	https://doi.org/10.1109/RFIT60557.2024.10812436
Publication status	Published - 2024
Event	2024 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT2024) - Chengdu, China Duration: 28 Aug 2024 → 30 Aug 2024 http://www.em-conf.com/rfit2024/index.php

Publication series

Name
ISSN (Print)	2378-3893
ISSN (Electronic)	2836-3825

Conference

Conference	2024 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT2024)
Place	China
City	Chengdu
Period	28/08/24 → 30/08/24
Internet address	http://www.em-conf.com/rfit2024/index.php

Research Keywords

SPDT
MMIC
OCL
GaN

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10.1109/RFIT60557.2024.10812436

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@inproceedings{30909aa125ac42f4a2ccf3646b2ea2c7,

title = "A Campact GaN Dual-band SPDT Switch with Coupled Technique",

abstract = "This paper presents a dual-band GaN MMIC SPDT switch design. Utilizing a novel on-chip coupled-line (OCL) topology, the input signal can be directed into either low- or highband paths, thereby achieving dual-band characteristics. The operating frequencies for the low- and high-bands are determined by carefully selecting the electrical lengths of the OCLs and the device size for the corresponding shunt-FETs. This design approach results in improved insertion loss (IL) and isolation (ISO) within a compact structure. With the proposed techniques, an SPDT circuit has been fabricated in a 0.25-mu m GaN-on-SiC process. The SPDT consists of a low-band path and a high-band path, achieving an average IL/ISO of 1.0/32 dB with the best input 1-dB compression points (IP1dB) of 37.2 dBm in the low-band of DC-15 GHz, and an average IL/ISO of 2.0/28.5 dB with the best IP1dB of 32.8 dBm in the high-band of 20-40 GHz. Additionally, the return loss is better than 11 dB for each port. {\textcopyright} 2024 IEEE",

keywords = "SPDT, MMIC, OCL, GaN",

author = "Xu Yan and Jingyuan Zhang and Si-Ping Gao and Yongxin Guo",

year = "2024",

doi = "10.1109/RFIT60557.2024.10812436",

language = "English",

isbn = "979-8-3315-4110-1",

publisher = "IEEE",

booktitle = "The 2024 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT2024)",

address = "United States",

note = "2024 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT2024) ; Conference date: 28-08-2024 Through 30-08-2024",

url = "http://www.em-conf.com/rfit2024/index.php",

}

Yan, X, Zhang, J, Gao, S-P & Guo, Y 2024, A Campact GaN Dual-band SPDT Switch with Coupled Technique. in The 2024 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT2024): Proceedings. IEEE, 2024 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT2024), Chengdu, China, 28/08/24. https://doi.org/10.1109/RFIT60557.2024.10812436

A Campact GaN Dual-band SPDT Switch with Coupled Technique. / Yan, Xu; Zhang, Jingyuan; Gao, Si-Ping et al.
The 2024 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT2024): Proceedings. IEEE, 2024.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - A Campact GaN Dual-band SPDT Switch with Coupled Technique

AU - Yan, Xu

AU - Zhang, Jingyuan

AU - Gao, Si-Ping

AU - Guo, Yongxin

PY - 2024

Y1 - 2024

N2 - This paper presents a dual-band GaN MMIC SPDT switch design. Utilizing a novel on-chip coupled-line (OCL) topology, the input signal can be directed into either low- or highband paths, thereby achieving dual-band characteristics. The operating frequencies for the low- and high-bands are determined by carefully selecting the electrical lengths of the OCLs and the device size for the corresponding shunt-FETs. This design approach results in improved insertion loss (IL) and isolation (ISO) within a compact structure. With the proposed techniques, an SPDT circuit has been fabricated in a 0.25-mu m GaN-on-SiC process. The SPDT consists of a low-band path and a high-band path, achieving an average IL/ISO of 1.0/32 dB with the best input 1-dB compression points (IP1dB) of 37.2 dBm in the low-band of DC-15 GHz, and an average IL/ISO of 2.0/28.5 dB with the best IP1dB of 32.8 dBm in the high-band of 20-40 GHz. Additionally, the return loss is better than 11 dB for each port. © 2024 IEEE

AB - This paper presents a dual-band GaN MMIC SPDT switch design. Utilizing a novel on-chip coupled-line (OCL) topology, the input signal can be directed into either low- or highband paths, thereby achieving dual-band characteristics. The operating frequencies for the low- and high-bands are determined by carefully selecting the electrical lengths of the OCLs and the device size for the corresponding shunt-FETs. This design approach results in improved insertion loss (IL) and isolation (ISO) within a compact structure. With the proposed techniques, an SPDT circuit has been fabricated in a 0.25-mu m GaN-on-SiC process. The SPDT consists of a low-band path and a high-band path, achieving an average IL/ISO of 1.0/32 dB with the best input 1-dB compression points (IP1dB) of 37.2 dBm in the low-band of DC-15 GHz, and an average IL/ISO of 2.0/28.5 dB with the best IP1dB of 32.8 dBm in the high-band of 20-40 GHz. Additionally, the return loss is better than 11 dB for each port. © 2024 IEEE

KW - SPDT

KW - MMIC

KW - OCL

KW - GaN

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:001443515100054

U2 - 10.1109/RFIT60557.2024.10812436

DO - 10.1109/RFIT60557.2024.10812436

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 979-8-3315-4110-1

BT - The 2024 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT2024)

PB - IEEE

T2 - 2024 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT2024)

Y2 - 28 August 2024 through 30 August 2024

ER -

A Campact GaN Dual-band SPDT Switch with Coupled Technique

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