A broadside-coupled meander-line resonator in 0.13-μm SiGe technology for millimeter-wave application

Sudipta Chakraborty; Yang Yang; Xi Zhu; Oya Sevimli; Quan Xue; Karu Esselle; Michael Heimlich

doi:10.1109/LED.2016.2520960

Author(s)

Sudipta Chakraborty
Yang Yang
Xi Zhu
Oya Sevimli
Quan Xue
And 2 others

Karu Esselle
Michael Heimlich

Related Research Unit(s)

Detail(s)

Original language	English
Article number	7390000
Pages (from-to)	329-332
Journal / Publication	IEEE Electron Device Letters
Volume	37
Issue number	3
Publication status	Published - 1 Mar 2016

Link(s)

DOI	DOI https://doi.org/10.1109/LED.2016.2520960 Final Published version
	Check@CityULib
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-84963975905&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(100a7800-b243-45a1-9a10-036f4eaa019a).html

Abstract

An on-chip resonator is designed and fabricated using a standard 0.13- μ m SiGe technology for millimeter-wave applications. The designed resonator is based on a unique structure, which consists of two broadside-coupled meander lines with opposite orientation. The equivalent LC circuit of the resonator is given, while the impact of the structure on the resonance frequencies is investigated. Using this structure along with capacitors, a compact bandpass filter (BPF) is also designed and fabricated. The measured results show that the resonator can generate a resonance at 57 GHz with the attenuation better than 13.7 dB, while the BPF has a center frequency at 31 GHz and a insertion loss of 2.4 dB. The chip size of both the resonator and the BPF, excluding the pads, is only 0.024 mm² ( 0.09× 0.27 mm².

Research Area(s)

Broadside-coupled, meander-line resonator, millimeter-wave, SiGe, slow-wave structure

Citation Format(s)

[ RIS ] [ BibTeX ]

A broadside-coupled meander-line resonator in 0.13-μm SiGe technology for millimeter-wave application. / Chakraborty, Sudipta; Yang, Yang; Zhu, Xi et al.
In: IEEE Electron Device Letters, Vol. 37, No. 3, 7390000, 01.03.2016, p. 329-332.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Chakraborty, S, Yang, Y, Zhu, X, Sevimli, O, Xue, Q, Esselle, K & Heimlich, M 2016, 'A broadside-coupled meander-line resonator in 0.13-μm SiGe technology for millimeter-wave application', IEEE Electron Device Letters, vol. 37, no. 3, 7390000, pp. 329-332. https://doi.org/10.1109/LED.2016.2520960

Chakraborty, S., Yang, Y., Zhu, X., Sevimli, O., Xue, Q., Esselle, K., & Heimlich, M. (2016). A broadside-coupled meander-line resonator in 0.13-μm SiGe technology for millimeter-wave application. IEEE Electron Device Letters, 37(3), 329-332. Article 7390000. https://doi.org/10.1109/LED.2016.2520960

Chakraborty S, Yang Y, Zhu X, Sevimli O, Xue Q, Esselle K et al. A broadside-coupled meander-line resonator in 0.13-μm SiGe technology for millimeter-wave application. IEEE Electron Device Letters. 2016 Mar 1;37(3):329-332. 7390000. doi: 10.1109/LED.2016.2520960

Chakraborty, Sudipta ; Yang, Yang ; Zhu, Xi et al. / A broadside-coupled meander-line resonator in 0.13-μm SiGe technology for millimeter-wave application. In: IEEE Electron Device Letters. 2016 ; Vol. 37, No. 3. pp. 329-332.