TY - JOUR
T1 - A broadside-coupled meander-line resonator in 0.13-μm SiGe technology for millimeter-wave application
AU - Chakraborty, Sudipta
AU - Yang, Yang
AU - Zhu, Xi
AU - Sevimli, Oya
AU - Xue, Quan
AU - Esselle, Karu
AU - Heimlich, Michael
PY - 2016/3/1
Y1 - 2016/3/1
N2 - An on-chip resonator is designed and fabricated using a standard 0.13- μ m SiGe technology for millimeter-wave applications. The designed resonator is based on a unique structure, which consists of two broadside-coupled meander lines with opposite orientation. The equivalent LC circuit of the resonator is given, while the impact of the structure on the resonance frequencies is investigated. Using this structure along with capacitors, a compact bandpass filter (BPF) is also designed and fabricated. The measured results show that the resonator can generate a resonance at 57 GHz with the attenuation better than 13.7 dB, while the BPF has a center frequency at 31 GHz and a insertion loss of 2.4 dB. The chip size of both the resonator and the BPF, excluding the pads, is only 0.024 mm2 ( 0.09× 0.27 mm2.
AB - An on-chip resonator is designed and fabricated using a standard 0.13- μ m SiGe technology for millimeter-wave applications. The designed resonator is based on a unique structure, which consists of two broadside-coupled meander lines with opposite orientation. The equivalent LC circuit of the resonator is given, while the impact of the structure on the resonance frequencies is investigated. Using this structure along with capacitors, a compact bandpass filter (BPF) is also designed and fabricated. The measured results show that the resonator can generate a resonance at 57 GHz with the attenuation better than 13.7 dB, while the BPF has a center frequency at 31 GHz and a insertion loss of 2.4 dB. The chip size of both the resonator and the BPF, excluding the pads, is only 0.024 mm2 ( 0.09× 0.27 mm2.
KW - Broadside-coupled
KW - meander-line resonator
KW - millimeter-wave
KW - SiGe
KW - slow-wave structure
UR - http://www.scopus.com/inward/record.url?scp=84963975905&partnerID=8YFLogxK
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84963975905&origin=recordpage
U2 - 10.1109/LED.2016.2520960
DO - 10.1109/LED.2016.2520960
M3 - RGC 21 - Publication in refereed journal
SN - 0741-3106
VL - 37
SP - 329
EP - 332
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 3
M1 - 7390000
ER -