A 60 GHz CMOS Power Amplifier based on an I-4,quivalent Substrate Model for Microstrip

Shichang Chen; Gaofeng Wang; Quan Xue

A 60 GHz CMOS Power Amplifier based on an I-4,quivalent Substrate Model for Microstrip

Shichang Chen^*, Gaofeng Wang, Quan Xue

^*Corresponding author for this work

State Key Laboratory of Terahertz and Millimeter Waves (City University of Hong Kong)

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

A 60 GHz fully differential power amplifier (PA) based on microstrip line (MSL) is presented in this paper. To accelerate design and characterization in EDA simulators circuit simulations, an equivalent substrate model extraction method for MSL is introduced. A differential three -stage cascode PA prototype is implemented in 65-nm bulk CMOS process for demonstration. The proposed PA has a 3 -dB bandwidth ranging from 50 to 61 GHz, and generates saturation output power of 11.7 dBm with 20 dB gain, at 60 GHz. The test and simulation results agree well, indicating the effectiveness of the extracted model. This MSL model based design approach will pave a quick way for millimeter -wave power amplifier designs.

Original language	English
Title of host publication	2016 IEEE INTERNATIONAL WORKSHOP ON ELECTROMAGNETICS: APPLICATIONS AND STUDENT INNOVATION COMPETITION (IWEM)
Publisher	IEEE
Publication status	Published - 2016
Event	2016 IEEE International Workshop on Electromagnetics (iWEM2016): Applications and Student Innovation Competition - Nanjing, China Duration: 16 May 2016 → 18 May 2016

Conference

Conference	2016 IEEE International Workshop on Electromagnetics (iWEM2016): Applications and Student Innovation Competition
Place	China
City	Nanjing
Period	16/05/16 → 18/05/16

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@inproceedings{dda8ba881c694d679be1f30068b47069,

title = "A 60 GHz CMOS Power Amplifier based on an I-4,quivalent Substrate Model for Microstrip",

abstract = "A 60 GHz fully differential power amplifier (PA) based on microstrip line (MSL) is presented in this paper. To accelerate design and characterization in EDA simulators circuit simulations, an equivalent substrate model extraction method for MSL is introduced. A differential three -stage cascode PA prototype is implemented in 65-nm bulk CMOS process for demonstration. The proposed PA has a 3 -dB bandwidth ranging from 50 to 61 GHz, and generates saturation output power of 11.7 dBm with 20 dB gain, at 60 GHz. The test and simulation results agree well, indicating the effectiveness of the extracted model. This MSL model based design approach will pave a quick way for millimeter -wave power amplifier designs.",

author = "Shichang Chen and Gaofeng Wang and Quan Xue",

year = "2016",

language = "English",

booktitle = "2016 IEEE INTERNATIONAL WORKSHOP ON ELECTROMAGNETICS: APPLICATIONS AND STUDENT INNOVATION COMPETITION (IWEM)",

publisher = "IEEE",

address = "United States",

note = "2016 IEEE International Workshop on Electromagnetics (iWEM2016): Applications and Student Innovation Competition ; Conference date: 16-05-2016 Through 18-05-2016",

}

Chen, S, Wang, G & Xue, Q 2016, A 60 GHz CMOS Power Amplifier based on an I-4,quivalent Substrate Model for Microstrip. in 2016 IEEE INTERNATIONAL WORKSHOP ON ELECTROMAGNETICS: APPLICATIONS AND STUDENT INNOVATION COMPETITION (IWEM). IEEE, 2016 IEEE International Workshop on Electromagnetics (iWEM2016): Applications and Student Innovation Competition, Nanjing, China, 16/05/16.

A 60 GHz CMOS Power Amplifier based on an I-4,quivalent Substrate Model for Microstrip. / Chen, Shichang; Wang, Gaofeng; Xue, Quan.
2016 IEEE INTERNATIONAL WORKSHOP ON ELECTROMAGNETICS: APPLICATIONS AND STUDENT INNOVATION COMPETITION (IWEM). IEEE, 2016.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - A 60 GHz CMOS Power Amplifier based on an I-4,quivalent Substrate Model for Microstrip

AU - Chen, Shichang

AU - Wang, Gaofeng

AU - Xue, Quan

PY - 2016

Y1 - 2016

N2 - A 60 GHz fully differential power amplifier (PA) based on microstrip line (MSL) is presented in this paper. To accelerate design and characterization in EDA simulators circuit simulations, an equivalent substrate model extraction method for MSL is introduced. A differential three -stage cascode PA prototype is implemented in 65-nm bulk CMOS process for demonstration. The proposed PA has a 3 -dB bandwidth ranging from 50 to 61 GHz, and generates saturation output power of 11.7 dBm with 20 dB gain, at 60 GHz. The test and simulation results agree well, indicating the effectiveness of the extracted model. This MSL model based design approach will pave a quick way for millimeter -wave power amplifier designs.

AB - A 60 GHz fully differential power amplifier (PA) based on microstrip line (MSL) is presented in this paper. To accelerate design and characterization in EDA simulators circuit simulations, an equivalent substrate model extraction method for MSL is introduced. A differential three -stage cascode PA prototype is implemented in 65-nm bulk CMOS process for demonstration. The proposed PA has a 3 -dB bandwidth ranging from 50 to 61 GHz, and generates saturation output power of 11.7 dBm with 20 dB gain, at 60 GHz. The test and simulation results agree well, indicating the effectiveness of the extracted model. This MSL model based design approach will pave a quick way for millimeter -wave power amplifier designs.

M3 - RGC 32 - Refereed conference paper (with host publication)

BT - 2016 IEEE INTERNATIONAL WORKSHOP ON ELECTROMAGNETICS: APPLICATIONS AND STUDENT INNOVATION COMPETITION (IWEM)

PB - IEEE

T2 - 2016 IEEE International Workshop on Electromagnetics (iWEM2016): Applications and Student Innovation Competition

Y2 - 16 May 2016 through 18 May 2016

ER -

A 60 GHz CMOS Power Amplifier based on an I-4,quivalent Substrate Model for Microstrip

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