Abstract
This letter presents a novel design method for wideband low-noise amplifiers (LNAs), which decouples the realization procedure of input noise matching, input impedance matching, and gain flatness. The input matching network is designed to realize wideband noise matching. Then, the degeneration inductor and T-type interstage matching network with magnetic coupling are employed to meet the required range of the interstage impedance mismatch level to achieve wide input impedance bandwidth. The gain bandwidth is enhanced by designing the impedance mismatch related to output matching network, without affecting the input matching. For demonstration, a three-stage E-/W-band LNA has been implemented using a 0.13-µm SiGe BiCMOS technology. The LNA achieves a peak gain of 24.1 dB with a 3-dB gain bandwidth of 53 GHz, less than −10-dB |S11| bandwidth of 50 GHz, and a low noise figure (NF) ranging from 3.8 to 6.9 dB across the W-band, while consuming power of 23 mW. © 2025 IEEE.
| Original language | English |
|---|---|
| Pages (from-to) | 2113-2116 |
| Number of pages | 4 |
| Journal | IEEE Microwave and Wireless Technology Letters |
| Volume | 35 |
| Issue number | 12 |
| Online published | 4 Nov 2025 |
| DOIs | |
| Publication status | Published - Dec 2025 |
Funding
This work was supported in part by the Fundamental Research Funds for the Central Universities under Grant 30924010916 and in part by the State Key Laboratory of Radio Frequency Heterogeneous Integration under Grant KF2025009.
Research Keywords
- Degeneration inductance
- E-/W-band
- impedance mismatch
- low-noise amplifier (LNA)
- wideband
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