A 5.25GHz GaAs PHEMT power amplifier for 802.11a application

Yanjun Peng; K. F. Tsang; Ling Sun; Huaxiang Lu; Yanjin Li; Weiping Jing

doi:10.1109/ICMMT.2010.5525029

A 5.25GHz GaAs PHEMT power amplifier for 802.11a application

Yanjun Peng^*, K. F. Tsang, Ling Sun, Huaxiang Lu, Yanjin Li, Weiping Jing

^*Corresponding author for this work

Department of Electrical Engineering

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

1 Citation (Scopus)

Abstract

A 5.25GHz GaAs PHEMT power amplifier for 802.11a application has been realized in the OMMIC 0.2μm AlGaAs/InGaAs/GaAs PHEMT process. To guarantee the PHEMT unconditionally stable, a combined stabilizing circuit is used. Under a single supply voltage of +3.5V, this power amplifier exhibits linear output power of 24.8dBm (P_1dB), small signal gain of 25.6dB and the power added efficiency (PAE) of 22% at P_1dB. The die size is only 1.5mm×1.0mm. © 2010 IEEE.

Original language	English
Title of host publication	2010 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2010
Pages	693-695
DOIs	https://doi.org/10.1109/ICMMT.2010.5525029
Publication status	Published - 2010
Event	2010 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2010 - Chengdu, China Duration: 8 May 2010 → 11 May 2010

Conference

Conference	2010 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2010
Country/Territory	China
City	Chengdu
Period	8/05/10 → 11/05/10

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@inproceedings{5cdd3f39cd8741d89a9d3fac7c5dd5b4,

title = "A 5.25GHz GaAs PHEMT power amplifier for 802.11a application",

abstract = "A 5.25GHz GaAs PHEMT power amplifier for 802.11a application has been realized in the OMMIC 0.2μm AlGaAs/InGaAs/GaAs PHEMT process. To guarantee the PHEMT unconditionally stable, a combined stabilizing circuit is used. Under a single supply voltage of +3.5V, this power amplifier exhibits linear output power of 24.8dBm (P1dB), small signal gain of 25.6dB and the power added efficiency (PAE) of 22% at P1dB. The die size is only 1.5mm×1.0mm. {\textcopyright} 2010 IEEE.",

author = "Yanjun Peng and Tsang, {K. F.} and Ling Sun and Huaxiang Lu and Yanjin Li and Weiping Jing",

year = "2010",

doi = "10.1109/ICMMT.2010.5525029",

language = "English",

isbn = "9781424457052",

pages = "693--695",

booktitle = "2010 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2010",

note = "2010 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2010 ; Conference date: 08-05-2010 Through 11-05-2010",

}

Peng, Y, Tsang, KF, Sun, L, Lu, H, Li, Y & Jing, W 2010, A 5.25GHz GaAs PHEMT power amplifier for 802.11a application. in 2010 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2010., 5525029, pp. 693-695, 2010 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2010, Chengdu, China, 8/05/10. https://doi.org/10.1109/ICMMT.2010.5525029

A 5.25GHz GaAs PHEMT power amplifier for 802.11a application. / Peng, Yanjun; Tsang, K. F.; Sun, Ling et al.
2010 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2010. 2010. p. 693-695 5525029.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - A 5.25GHz GaAs PHEMT power amplifier for 802.11a application

AU - Peng, Yanjun

AU - Tsang, K. F.

AU - Sun, Ling

AU - Lu, Huaxiang

AU - Li, Yanjin

AU - Jing, Weiping

PY - 2010

Y1 - 2010

N2 - A 5.25GHz GaAs PHEMT power amplifier for 802.11a application has been realized in the OMMIC 0.2μm AlGaAs/InGaAs/GaAs PHEMT process. To guarantee the PHEMT unconditionally stable, a combined stabilizing circuit is used. Under a single supply voltage of +3.5V, this power amplifier exhibits linear output power of 24.8dBm (P1dB), small signal gain of 25.6dB and the power added efficiency (PAE) of 22% at P1dB. The die size is only 1.5mm×1.0mm. © 2010 IEEE.

AB - A 5.25GHz GaAs PHEMT power amplifier for 802.11a application has been realized in the OMMIC 0.2μm AlGaAs/InGaAs/GaAs PHEMT process. To guarantee the PHEMT unconditionally stable, a combined stabilizing circuit is used. Under a single supply voltage of +3.5V, this power amplifier exhibits linear output power of 24.8dBm (P1dB), small signal gain of 25.6dB and the power added efficiency (PAE) of 22% at P1dB. The die size is only 1.5mm×1.0mm. © 2010 IEEE.

UR - http://www.scopus.com/inward/record.url?scp=79953790316&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-79953790316&origin=recordpage

U2 - 10.1109/ICMMT.2010.5525029

DO - 10.1109/ICMMT.2010.5525029

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 9781424457052

SP - 693

EP - 695

BT - 2010 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2010

T2 - 2010 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2010

Y2 - 8 May 2010 through 11 May 2010

ER -

A 5.25GHz GaAs PHEMT power amplifier for 802.11a application

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