Abstract
This article presents a compact 6-bit digital phase shifter (PS) monolithic microwave integrated circuit (MMIC) with low root-mean-square (rms) phase and amplitude errors. A novel bandpass phase-shifting cell (PSC) with embedded high-isolation switches is proposed and adopted in 180°-and 90°-bit designs to compensate the isolation-degradation caused by the large drain-source capacitance of GaN transistors. Then, a systematic design method is investigated to minimize phase and amplitude errors. To validate the proposed techniques, a 6-bit C-band PS is implemented in a 0.25 μm GaN-on-SiC HEMT process with a circuit size of 1.9 × 2.5 mm2 (0.03 × 0.04λ2). The measured rms phase error of the proposed PS is less than 1.2° from 4.5 to 5.5 GHz with a 2.8° calibration bit. The insertion loss (IL) varies between 5.8 and 8.2 dB with an rms amplitude error of less than 0.5 dB. Besides, a good power linearity with 37.9 dBm input 1 dB compression point (IP1dB) and 49.8 dBm input third-order output-referred intercept point (IIP3) is also attained. The proposed PS exhibits superb overall performances in phase resolution, phase/amplitude error control, IL, and power handling capability within a small chip size. It can be a potential candidate for various systems including radars, cellular base stations, and avionic devices. © 2024 IEEE.
| Original language | English |
|---|---|
| Pages (from-to) | 2857-2868 |
| Journal | IEEE Transactions on Microwave Theory and Techniques |
| Volume | 73 |
| Issue number | 5 |
| Online published | 5 Nov 2024 |
| DOIs | |
| Publication status | Published - May 2025 |
Funding
This work was supported in part by the National Natural Science Foundation of China under Grant 62071232; and in part by SGP-CityU Start-Up Grant for Professor, City University of Hong Kong under Grant 9380170.
Research Keywords
- 0.25 μm GaN-on-SiC HEMT
- Amplitude error
- C-band
- high power handling capability
- monolithic microwave integrated circuit (MMIC)
- phase error
- phase shifter (PS)
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