A 360° Tunable Phase Shifter With Low Phase Error Based on Bandpass Networks in 0.25-μ m GaN Technology

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Original languageEnglish
Journal / PublicationIEEE Transactions on Very Large Scale Integration (VLSI) Systems
Online published12 Nov 2024
Publication statusOnline published - 12 Nov 2024

Abstract

This brief presents a 360 ° tunable phase shifter (PS) with low phase error in a 0.25- μ m GaN-on-SiC HEMT process. To achieve these features, the design incorporates two key innovations: a novel switched-bandpass phase-shifting cell (PSC) topology and a Q -learning-based optimization algorithm, both applied for the first time in monolithic microwave integrated circuit (MMIC) PS designs. The adverse effects of the charge trapping effect in GaN HEMT switches are mitigated by using a nonlinear equivalent circuit model. A PS prototype consisting of a fifth-order bandpass PSC and two third-order bandpass PSCs with a core area of 1.25 × 2.5 mm2 is designed, fabricated, and measured. Experimental results demonstrate a low rms phase error of less than 7.0 ° , along with high power linearity characterized by an IP1 dB of 37 dBm and an IIP3 of 48 dBm, over a frequency range from 4.1 to 5.3 GHz. © 1993-2012 IEEE.

Research Area(s)

  • 0.25-μ m GaN-on-SiC HEMT, low phase error, phase shifter (PS), Q -learning, reinforcement learning