A 2D Heterostructure-Based Multifunctional Floating Gate Memory Device for Multimodal Reservoir Computing

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Detail(s)

Original languageEnglish
Article number2308502
Journal / PublicationAdvanced Materials
Volume36
Issue number3
Online published20 Oct 2023
Publication statusPublished - 18 Jan 2024

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Abstract

The demand for economical and efficient data processing has led to a surge of interest in neuromorphic computing based on emerging two-dimensional (2D) materials in recent years. As a rising van der Waals (vdW) p-type Weyl semiconductor with many intriguing properties, tellurium (Te) has been widely used in advanced electronics/optoelectronics. However, its application in floating gate (FG) memory devices for information processing has never been explored. Herein, an electronic/optoelectronic FG memory device enabled by Te-based 2D vdW heterostructure for multimodal reservoir computing (RC) is reported. When subjected to intense electrical/optical stimuli, the device exhibits impressive nonvolatile electronic memory behaviors including ≈108 extinction ratio, ≈100 ns switching speed, >4000 cycles, >4000-s retention stability, and nonvolatile multibit optoelectronic programmable characteristics. When the input stimuli weaken, the nonvolatile memory degrades into volatile memory. Leveraging these rich nonlinear dynamics, a multimodal RC system with high recognition accuracy of 90.77% for event-type multimodal handwritten digit-recognition is demonstrated. © 2023 The Authors. Advanced Materials published by Wiley-VCH GmbH.

Research Area(s)

  • 2D van der Waals heterostructures, floating gate, multimodal reservoir computing, optoelectronic memory devices, tellurium nanoflake

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