TY - JOUR
T1 - A 2D Heterostructure-Based Multifunctional Floating Gate Memory Device for Multimodal Reservoir Computing
AU - Zha, Jiajia
AU - Xia, Yunpeng
AU - Shi, Shuhui
AU - Huang, Haoxin
AU - Li, Siyuan
AU - Qian, Chen
AU - Wang, Huide
AU - Yang, Peng
AU - Zhang, Zhuomin
AU - Meng, You
AU - Wang, Wei
AU - Yang, Zhengbao
AU - Yu, Hongyu
AU - Ho, Johnny C.
AU - Wang, Zhongrui
AU - Tan, Chaoliang
PY - 2024/1/18
Y1 - 2024/1/18
N2 - The demand for economical and efficient data processing has led to a surge of interest in neuromorphic computing based on emerging two-dimensional (2D) materials in recent years. As a rising van der Waals (vdW) p-type Weyl semiconductor with many intriguing properties, tellurium (Te) has been widely used in advanced electronics/optoelectronics. However, its application in floating gate (FG) memory devices for information processing has never been explored. Herein, an electronic/optoelectronic FG memory device enabled by Te-based 2D vdW heterostructure for multimodal reservoir computing (RC) is reported. When subjected to intense electrical/optical stimuli, the device exhibits impressive nonvolatile electronic memory behaviors including ≈108 extinction ratio, ≈100 ns switching speed, >4000 cycles, >4000-s retention stability, and nonvolatile multibit optoelectronic programmable characteristics. When the input stimuli weaken, the nonvolatile memory degrades into volatile memory. Leveraging these rich nonlinear dynamics, a multimodal RC system with high recognition accuracy of 90.77% for event-type multimodal handwritten digit-recognition is demonstrated. © 2023 The Authors. Advanced Materials published by Wiley-VCH GmbH.
AB - The demand for economical and efficient data processing has led to a surge of interest in neuromorphic computing based on emerging two-dimensional (2D) materials in recent years. As a rising van der Waals (vdW) p-type Weyl semiconductor with many intriguing properties, tellurium (Te) has been widely used in advanced electronics/optoelectronics. However, its application in floating gate (FG) memory devices for information processing has never been explored. Herein, an electronic/optoelectronic FG memory device enabled by Te-based 2D vdW heterostructure for multimodal reservoir computing (RC) is reported. When subjected to intense electrical/optical stimuli, the device exhibits impressive nonvolatile electronic memory behaviors including ≈108 extinction ratio, ≈100 ns switching speed, >4000 cycles, >4000-s retention stability, and nonvolatile multibit optoelectronic programmable characteristics. When the input stimuli weaken, the nonvolatile memory degrades into volatile memory. Leveraging these rich nonlinear dynamics, a multimodal RC system with high recognition accuracy of 90.77% for event-type multimodal handwritten digit-recognition is demonstrated. © 2023 The Authors. Advanced Materials published by Wiley-VCH GmbH.
KW - 2D van der Waals heterostructures
KW - floating gate
KW - multimodal reservoir computing
KW - optoelectronic memory devices
KW - tellurium nanoflake
UR - http://www.scopus.com/inward/record.url?scp=85178202138&partnerID=8YFLogxK
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-85178202138&origin=recordpage
U2 - 10.1002/adma.202308502
DO - 10.1002/adma.202308502
M3 - RGC 21 - Publication in refereed journal
SN - 0935-9648
VL - 36
JO - Advanced Materials
JF - Advanced Materials
IS - 3
M1 - 2308502
ER -