A 2D Heterostructure-Based Multifunctional Floating Gate Memory Device for Multimodal Reservoir Computing

Jiajia Zha, Yunpeng Xia, Shuhui Shi, Haoxin Huang, Siyuan Li, Chen Qian, Huide Wang, Peng Yang, Zhuomin Zhang, You Meng, Wei Wang, Zhengbao Yang, Hongyu Yu, Johnny C. Ho*, Zhongrui Wang*, Chaoliang Tan*

*Corresponding author for this work

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

41 Citations (Scopus)
44 Downloads (CityUHK Scholars)

Abstract

The demand for economical and efficient data processing has led to a surge of interest in neuromorphic computing based on emerging two-dimensional (2D) materials in recent years. As a rising van der Waals (vdW) p-type Weyl semiconductor with many intriguing properties, tellurium (Te) has been widely used in advanced electronics/optoelectronics. However, its application in floating gate (FG) memory devices for information processing has never been explored. Herein, an electronic/optoelectronic FG memory device enabled by Te-based 2D vdW heterostructure for multimodal reservoir computing (RC) is reported. When subjected to intense electrical/optical stimuli, the device exhibits impressive nonvolatile electronic memory behaviors including ≈108 extinction ratio, ≈100 ns switching speed, >4000 cycles, >4000-s retention stability, and nonvolatile multibit optoelectronic programmable characteristics. When the input stimuli weaken, the nonvolatile memory degrades into volatile memory. Leveraging these rich nonlinear dynamics, a multimodal RC system with high recognition accuracy of 90.77% for event-type multimodal handwritten digit-recognition is demonstrated. © 2023 The Authors. Advanced Materials published by Wiley-VCH GmbH.
Original languageEnglish
Article number2308502
JournalAdvanced Materials
Volume36
Issue number3
Online published20 Oct 2023
DOIs
Publication statusPublished - 18 Jan 2024

Funding

J.Z., Y.X., and S.S. contributed equally to this work. C.T. thanks the funding support from the National Natural Science Foundation of China – Excellent Young Scientists Fund (Hong Kong and Macau) (No. 52122002). Z.W. thanked the support from the Hong Kong Research Grant Council (Grant Nos. 27206321 and 17205922), National Natural Science Foundation of China – Excellent Young Scientists Fund (Hong Kong and Macau) (Grant No. 62122004). J.H. thanked for the support from a fellowship award (CityU RFS2021-1S04) from the Research Grant Council of Hong Kong.

Research Keywords

  • 2D van der Waals heterostructures
  • floating gate
  • multimodal reservoir computing
  • optoelectronic memory devices
  • tellurium nanoflake

Publisher's Copyright Statement

  • This full text is made available under CC-BY-NC 4.0. https://creativecommons.org/licenses/by-nc/4.0/

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