A 2.4-GHz SiGe HBT power amplifier with bias current controlling circuit
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Related Research Unit(s)
Detail(s)
| Original language | English |
|---|---|
| Article number | 55008 |
| Journal / Publication | Journal of Semiconductors |
| Volume | 30 |
| Issue number | 5 |
| Publication status | Published - 2009 |
Link(s)
Abstract
A 2.4-GHz SiGe HBT power amplifier (PA) with a novel bias current controlling circuit has been realized in IBM 0.35-μm SiGe BiCMOS technology, BiCMOS5PAe. The bias circuit switches the quiescent current to make the PA operate in a high or low power mode. Under a single supply voltage of +3.5 V, the two-stage mode-switchable power amplifier provides a PAE improvement up to 56.7% and 19.2% at an output power of 0 and 20 dBm, respectively, with a reduced quiescent current in the low power mode as compared to only operating the PA in the high power mode. The die size is only 1.32 × 1.37 mm2. © 2009 Chinese Institute of Electronics.
Research Area(s)
- Bias circuit, Power amplifier, SiGe HBT
Citation Format(s)
A 2.4-GHz SiGe HBT power amplifier with bias current controlling circuit. / Peng, Yanjun; Song, Jiayou; Wang, Zhigong et al.
In: Journal of Semiconductors, Vol. 30, No. 5, 55008, 2009.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
