TY - GEN
T1 - 60GHz unilateralized CMOS differential amplifier
AU - Bi, Xiaojun
AU - Guo, Yongxin
AU - Brinkhoff, James
AU - Leong, Mook-Seng
AU - Lin, Fujiang
N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].
PY - 2010
Y1 - 2010
N2 - A novel unilateralization technique for a high frequency differential power amplifier is proposed to improve the gain and stability. To demonstrate the effectiveness, a differential 60-GHz power amplifier is designed based on the 90nm CMOS technique. A transformer coupled differential architecture is used in this design. By using cross coupled capacitors to realize the four-port feedback network, the inherent parasitic effects are cancelled, and the differential power amplifier is neutralized. The two-stage amplifier has a gain of 10 dB, with a center frequency of 58.5 GHz and a bandwidth of 6.3 GHz. In the maximum gain state, the output 1dB compression point is +5.1 dBm, Psat is +8.5 dBm and the peak PAE is 7.7 %, drawing 53 mA from a 1-V supply. © 2010 IEEE.
AB - A novel unilateralization technique for a high frequency differential power amplifier is proposed to improve the gain and stability. To demonstrate the effectiveness, a differential 60-GHz power amplifier is designed based on the 90nm CMOS technique. A transformer coupled differential architecture is used in this design. By using cross coupled capacitors to realize the four-port feedback network, the inherent parasitic effects are cancelled, and the differential power amplifier is neutralized. The two-stage amplifier has a gain of 10 dB, with a center frequency of 58.5 GHz and a bandwidth of 6.3 GHz. In the maximum gain state, the output 1dB compression point is +5.1 dBm, Psat is +8.5 dBm and the peak PAE is 7.7 %, drawing 53 mA from a 1-V supply. © 2010 IEEE.
UR - https://www.scopus.com/pages/publications/79953767158
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-79953767158&origin=recordpage
U2 - 10.1109/ICMMT.2010.5524902
DO - 10.1109/ICMMT.2010.5524902
M3 - RGC 32 - Refereed conference paper (with host publication)
SN - 9781424457052
T3 - 2010 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2010
SP - 204
EP - 207
BT - 2010 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2010
T2 - 2010 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2010
Y2 - 8 May 2010 through 11 May 2010
ER -