Abstract
This letter presents 6-bit differential step attenuators on SiGe BiCMOS for K-and Ka-bands with temperature compensation technique. A temperature-variant voltage source (TVVS) is applied to source and drain terminals of the switch MOSFETs. on-state resistance of MOSFETs, therefore, remains stable with temperature variation. With this technique, the root mean square (RMS) attenuation error will be stabilized under different ambient temperatures. Two attenuators for K-and Ka-bands are fabricated using 0.13-μ m IBM 8XP SiGe BiCMOS process; both attenuators have a maximum attenuation of 31.5 dB with a step of 0.5 dB. The attenuator working at 15-18 GHz exhibits a maximum RMS attenuation error of 0.3 dB from-55 °C to 125 °C, whereas the attenuator working at 19-24 GHz shows a maximum RMS attenuation error of 0.5 dB. To the authors' best knowledge, for the first time, a TVVS is added to a 6-bit differential step attenuator to achieve consistent attenuation accuracy during thermal variation. © 2001-2012 IEEE.
| Original language | English |
|---|---|
| Article number | 8405578 |
| Pages (from-to) | 690-692 |
| Journal | IEEE Microwave and Wireless Components Letters |
| Volume | 28 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 1 Aug 2018 |
| Externally published | Yes |
Bibliographical note
Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].Research Keywords
- Attenuator
- root mean square (RMS) error
- SiGe BiCMOS
- temperature compensation