4H-SiC Metal-Semiconductor-Metal Ultraviolet Photodetectors in Operation of 450 °c

Wei-Cheng Lien; Dung-Sheng Tsai; Der-Hsien Lien; Debbie G. Senesky; Jr-Hau He; Albert P. Pisano

doi:10.1109/LED.2012.2214759

Author(s)

Wei-Cheng Lien
Dung-Sheng Tsai
Der-Hsien Lien
Debbie G. Senesky
Albert P. Pisano

Detail(s)

Original language	English
Article number	6329395
Pages (from-to)	1586-1588
Journal / Publication	IEEE Electron Device Letters
Volume	33
Issue number	11
Online published	11 Oct 2012
Publication status	Published - Nov 2012
Externally published	Yes

Link(s)

DOI	DOI https://doi.org/10.1109/LED.2012.2214759 Final Published version
	Check@CityULib
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-84867895313&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(d026e570-c4bb-4b80-b21e-da5899a61b4f).html

Abstract

This work demonstrates the high-temperature operation of metal-semiconductor-metal (MSM) photodetectors (PDs) up to 450 °C using lightly Al-doped epitaxial 4H-SiC thin films. The responsivity of the PDs under 325-nm illumination is 0.0305 A/W at 20-V bias at room temperature. The photocurrent-to-dark-current ratio of the SiC MSM PDs is as high as 1.3 ×10⁵ at 25 °C and is 0.62 at 450 °C. The rise/fall time of the PDs is increased slightly from 594 μs/684 μs to 684 μs/786 μs as the temperature increases from room temperature to 400 °C. These results support the use of 4H-SiC PDs in extremely high temperature applications.

Research Area(s)

High-temperature electronics, photodetectors (PDs), silicon carbide (SiC)

Citation Format(s)

[ RIS ] [ BibTeX ]

4H-SiC Metal-Semiconductor-Metal Ultraviolet Photodetectors in Operation of 450 °c. / Lien, Wei-Cheng; Tsai, Dung-Sheng; Lien, Der-Hsien et al.
In: IEEE Electron Device Letters, Vol. 33, No. 11, 6329395, 11.2012, p. 1586-1588.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Lien, W-C, Tsai, D-S, Lien, D-H, Senesky, DG, He, J-H & Pisano, AP 2012, '4H-SiC Metal-Semiconductor-Metal Ultraviolet Photodetectors in Operation of 450 °c', IEEE Electron Device Letters, vol. 33, no. 11, 6329395, pp. 1586-1588. https://doi.org/10.1109/LED.2012.2214759

Lien, W.-C., Tsai, D.-S., Lien, D.-H., Senesky, D. G., He, J.-H., & Pisano, A. P. (2012). 4H-SiC Metal-Semiconductor-Metal Ultraviolet Photodetectors in Operation of 450 °c. IEEE Electron Device Letters, 33(11), 1586-1588. Article 6329395. https://doi.org/10.1109/LED.2012.2214759

Lien WC, Tsai DS, Lien DH, Senesky DG, He JH, Pisano AP. 4H-SiC Metal-Semiconductor-Metal Ultraviolet Photodetectors in Operation of 450 °c. IEEE Electron Device Letters. 2012 Nov;33(11):1586-1588. 6329395. Epub 2012 Oct 11. doi: 10.1109/LED.2012.2214759

Lien, Wei-Cheng ; Tsai, Dung-Sheng ; Lien, Der-Hsien et al. / 4H-SiC Metal-Semiconductor-Metal Ultraviolet Photodetectors in Operation of 450 °c. In: IEEE Electron Device Letters. 2012 ; Vol. 33, No. 11. pp. 1586-1588.