40W BROADBAND CLASS A AMPLIFIER USING GaAs FETs.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Detail(s)

Original languageEnglish
Journal / PublicationIEE Colloquium (Digest)
Issue number1986 /88
Publication statusPublished - 1986
Externally publishedYes

Abstract

This paper describes the design of a high gain (46dB), high power class A amplifier operating over the frequency range 850MHz to 1300MHz. It was primarily designed to provide 16dBW saturated output power. The microwave power amplification is achieved by using a medium power, high gain pre-driver preceding a driver which feeds a power amplifier. The pre-driver is a four stage, 30dB gain GaAs FET amplifier providing an output power of 30dBm. The driver amplifier consists of a class 'A' power GaAs FET which is matched to give maximum output power together with a flat gain characteristic throughout the band. The power amplifier comprises an eight-way power divider, eight active elements and an eight-way power combiner. Each active element of the power amplifier uses a power GaAs FET which is physically identical to the driver amplifier.

Bibliographic Note

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Citation Format(s)

40W BROADBAND CLASS A AMPLIFIER USING GaAs FETs. / Chan, W. S.; Thompson, A.

In: IEE Colloquium (Digest), No. 1986 /88, 1986.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review