40W BROADBAND CLASS A AMPLIFIER USING GaAs FETs.

W. S. Chan; A. Thompson

40W BROADBAND CLASS A AMPLIFIER USING GaAs FETs.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Abstract

This paper describes the design of a high gain (46dB), high power class A amplifier operating over the frequency range 850MHz to 1300MHz. It was primarily designed to provide 16dBW saturated output power. The microwave power amplification is achieved by using a medium power, high gain pre-driver preceding a driver which feeds a power amplifier. The pre-driver is a four stage, 30dB gain GaAs FET amplifier providing an output power of 30dBm. The driver amplifier consists of a class 'A' power GaAs FET which is matched to give maximum output power together with a flat gain characteristic throughout the band. The power amplifier comprises an eight-way power divider, eight active elements and an eight-way power combiner. Each active element of the power amplifier uses a power GaAs FET which is physically identical to the driver amplifier.

Original language	English
Journal	IEE Colloquium (Digest)
Issue number	1986 /88
Publication status	Published - 1986
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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title = "40W BROADBAND CLASS A AMPLIFIER USING GaAs FETs.",

abstract = "This paper describes the design of a high gain (46dB), high power class A amplifier operating over the frequency range 850MHz to 1300MHz. It was primarily designed to provide 16dBW saturated output power. The microwave power amplification is achieved by using a medium power, high gain pre-driver preceding a driver which feeds a power amplifier. The pre-driver is a four stage, 30dB gain GaAs FET amplifier providing an output power of 30dBm. The driver amplifier consists of a class 'A' power GaAs FET which is matched to give maximum output power together with a flat gain characteristic throughout the band. The power amplifier comprises an eight-way power divider, eight active elements and an eight-way power combiner. Each active element of the power amplifier uses a power GaAs FET which is physically identical to the driver amplifier.",

author = "Chan, {W. S.} and A. Thompson",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].",

year = "1986",

language = "English",

journal = "IEE Colloquium (Digest)",

issn = "0963-3308",

publisher = "Institute of Electrical Engineers",

number = "1986 /88",

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T1 - 40W BROADBAND CLASS A AMPLIFIER USING GaAs FETs.

AU - Chan, W. S.

AU - Thompson, A.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 1986

Y1 - 1986

N2 - This paper describes the design of a high gain (46dB), high power class A amplifier operating over the frequency range 850MHz to 1300MHz. It was primarily designed to provide 16dBW saturated output power. The microwave power amplification is achieved by using a medium power, high gain pre-driver preceding a driver which feeds a power amplifier. The pre-driver is a four stage, 30dB gain GaAs FET amplifier providing an output power of 30dBm. The driver amplifier consists of a class 'A' power GaAs FET which is matched to give maximum output power together with a flat gain characteristic throughout the band. The power amplifier comprises an eight-way power divider, eight active elements and an eight-way power combiner. Each active element of the power amplifier uses a power GaAs FET which is physically identical to the driver amplifier.

AB - This paper describes the design of a high gain (46dB), high power class A amplifier operating over the frequency range 850MHz to 1300MHz. It was primarily designed to provide 16dBW saturated output power. The microwave power amplification is achieved by using a medium power, high gain pre-driver preceding a driver which feeds a power amplifier. The pre-driver is a four stage, 30dB gain GaAs FET amplifier providing an output power of 30dBm. The driver amplifier consists of a class 'A' power GaAs FET which is matched to give maximum output power together with a flat gain characteristic throughout the band. The power amplifier comprises an eight-way power divider, eight active elements and an eight-way power combiner. Each active element of the power amplifier uses a power GaAs FET which is physically identical to the driver amplifier.

UR - http://www.scopus.com/inward/record.url?scp=0022847357&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0022847357&origin=recordpage

M3 - RGC 21 - Publication in refereed journal

SN - 0963-3308

JO - IEE Colloquium (Digest)

JF - IEE Colloquium (Digest)

IS - 1986 /88

ER -

40W BROADBAND CLASS A AMPLIFIER USING GaAs FETs.

Abstract

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