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2W semiconductor laser with diffraction-limited output beam at 1620 nm wavelength

  • Ching-Fuh Lin*
  • , Chih-Hung Tsai
  • , Chia-Wei Tsai
  • , D. P. Tsai
  • , Yi-Shin Su
  • *Corresponding author for this work

Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review

Abstract

With the broad-area waveguide aligned at an angle to the cleaved facet, the semiconductor laser is able to emit diffraction-limited beam. The divergence angle is only 0.7 ° and the output power could exceed 2W. ©2002 Optical Society of America.
Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference
PublisherOSA - The Optical Society
Volume88
ISBN (Electronic)1-55752-733-4
Publication statusPublished - 2003
Externally publishedYes
EventConference on Lasers and Electro-Optics (CLEO) 2003 - Baltimore, United States
Duration: 1 Jun 20036 Jun 2003

Conference

ConferenceConference on Lasers and Electro-Optics (CLEO) 2003
PlaceUnited States
CityBaltimore
Period1/06/036/06/03

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